Nanoscale electronic inhomogeneities in 1⁢T⁢-TaS2

Campbell, B.; Riffle, J. V.; de la Torre, A.; Wang, Q.; Plumb, K. W.; Hollen, S. M.

doi:10.1103/physrevmaterials.8.034002

Title: Nanoscale electronic inhomogeneities in 1⁢T⁢-TaS₂

Journal Article · 05 March 2024 · Physical Review Materials

DOI: https://doi.org/10.1103/physrevmaterials.8.034002 · OSTI ID:2558175

^[1]; Riffle, J. V. ^[1];

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Univ. of New Hampshire, Durham, NH (United States)
Brown Univ., Providence, RI (United States)

Here, we report a set of scanning tunneling microscopy (STM) and spectroscopy (STS) experiments studying native defects in CVT grown 1⁢T–TaS₂. Six different sample surfaces from four bulk crystals were investigated. Wide area imaging reveals a prevalence of nanometer-scale electronic inhomogeneities due to native defects, with pristine regions interspersed. These inhomogeneities appear in typical as-grown crystals and coexist with a well-formed commensurate charge density wave of 1T–TaS₂ at low temperatures. Electronic inhomogeneities show up both as variations in the apparent height in STM and in the local density of states in STS; the bands can shift by 60 meV and the gap varies by more than 100 meV across inhomogeneities. These inhomogeneities are present in similar concentration across large-scale areas of all samples studied, but do not influence the charge density wave formation on local or global scales. The commensurate charge density wave exhibits long-range order and remains locally intact in the presence of these inhomogeneities.

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Research Organization:: Brown Univ., Providence, RI (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0021265

OSTI ID:: 2558175

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 3 Vol. 8; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Nanoscale electronic inhomogeneities in 1⁢T⁢-TaS₂