Driving rapid atomic order in MnAl via low-magnitude magnetic field annealing

Zhang, X.; Lejeune, B. T.; Marchant, G. A.; Baldino, H.; Aguiar, M.; Staunton, J. B.; Lewis, L. H.

doi:10.1016/j.actamat.2025.120868

Title: Driving rapid atomic order in MnAl via low-magnitude magnetic field annealing

Journal Article · 23 February 2025 · Acta Materialia

DOI: https://doi.org/10.1016/j.actamat.2025.120868 · OSTI ID:2531305

^[1]; Lejeune, B. T. ^[1];

^[2];

^[3]; Aguiar, M. ^[4];

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^[1]

Northeastern University, Boston, MA (United States)
University of Warwick, Coventry (United Kingdom); Uppsala University (Sweden)
Northeastern University, Boston, MA (United States); University of Central Florida, Orlando, FL (United States)
Massachusetts Institute of Technology, Cambridge, MA (United States)
University of Warwick, Coventry (United Kingdom)

Application of a mild (60 mT), uniform magnetic field during short-term thermal treatment of kinetically retained, atomically disordered (paramagnetic) ε-MnAl was found to deliver a significant ~50 % increase in the formation of L1₀ atomically ordered (ferromagnetic) τ-MnAl product phase, compared to that produced by conventional (i.e., zero-field) annealing under identical thermal conditions. The magnetic field, applied in a passive closed-circuit configuration during annealing, induced significant changes in the structural, magnetic, and phase evolution of the material. Computational results based on electronic structure calculations demonstrate that the effective magnetic susceptibility of τ-MnAl is sensitive to the orientation, rather than the magnitude, of an applied magnetic field in the vicinity of the Curie temperature. The uniaxial magnetocrystalline anisotropy of the L1₀ structure is proposed to act as a filter for selective propagation of the population of τ-MnAl variants that are favorably aligned with the applied field. In this manner, crystallographic “gridlock” is alleviated that would otherwise arise from the coexistence of multiple, energetically equivalent τ-phase variants within the parent ε-phase matrix. These results confirm that static, low-magnitude magnetic field annealing is able to accelerate L1₀ atomic ordering in the MnAl system and likely can exert similar influences in relevant magnetic systems, facilitating efficient tailoring of structure-sensitive magnetic properties for the manufacture of magnetic materials.

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Research Organization:: Northeastern University, Boston, MA (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0022168

OSTI ID:: 2531305

Journal Information:: Acta Materialia, Journal Name: Acta Materialia Vol. 288; ISSN 1359-6454

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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