Enhancement to the conductivity of surface transfer-doped (111) diamond through thermochemical surface etching

Yianni, S. A.; Stacey, A.; Creedon, D. L.; Xing, K.; Schenk, A. K.; Pakes, C. I.

doi:10.1063/5.0245506

Title: Enhancement to the conductivity of surface transfer-doped (111) diamond through thermochemical surface etching

Journal Article · 18 February 2025 · Applied Physics Letters

DOI: https://doi.org/10.1063/5.0245506 · OSTI ID:2526603

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La Trobe University, Melbourne, VIC (Australia); University of New South Wales, Sydney, NSW (Australia)
RMIT University, Melbourne, VIC (Australia); Princeton Plasma Physics Laboratory (PPPL), Princeton, NJ (United States)
University of Melbourne, Parkville, VIC (Australia); CSIRO Manufacturing, Clayton, VIC (Australia)
Monash University, Melbourne, VIC (Australia)
La Trobe University, Melbourne, VIC (Australia)

The use of a transition metal catalyzed thermochemical etching method for improving the carrier transport properties of the near-surface two-dimensional (2D) hole gas in surface transfer-doped hydrogen-terminated (111) diamond is demonstrated. Using Ni_0.8Cr_0.2 films deposited and annealed to a temperature of 900 °C, with up to three etch cycles, preferential (111) surface etching produces large terraces exceeding 10 μm in size with a surface microroughness, σ²_RMSλ, that is two orders of magnitude lower than for the pre-etched (111) surface. Magnetotransport measurements on hydrogen-terminated Hall bars engineered on the pre- and post-etched surfaces and rendered conductive by the adsorbed water layer formed on exposure to ambient conditions demonstrate that this etching causes an improvement in the hole mobility by an order of magnitude, resulting in a measured sheet resistivity of 1.04 kΩ/sq at a temperature of 4.2 K without gating.

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Research Organization:: Princeton Plasma Physics Laboratory (PPPL), Princeton, NJ (United States)

Sponsoring Organization:: Australian Research Council (ARC); USDOE

Grant/Contract Number:: AC02-09CH11466

OSTI ID:: 2526603

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 126; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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