Localized Flexoelectric Effect Around Ba(CuNb) Nano‐Clusters in Epitaxial BiFeO 3 Films for Enhancement of Electric and Multiferroic Properties
[1];
[13]
- School of Materials Science and Engineering Yeungnam University Gyeongsan 38541 Republic of Korea
- Department of Materials Science and Engineering Pohang University of Science and Technology Pohang 37673 Republic of Korea
- Materials Modeling and Characterization Department Korea Institute of Materials Science Changwon 51508 Republic of Korea
- Department of Materials Science and Engineering Pennsylvania State University University Park PA 16802 USA
- Department of Physics Inha University Incheon 22212 South Korea, Program in Semiconductor Convergence Inha University Incheon 22212 Republic of Korea
- Graduate School of Engineering Science Institute for Nanoscience Design Osaka University Toyonaka Osaka 560‐8531 Japan
- CSIR‐National Physical Laboratory Dr. K. S. Krishnan Marg New Delhi 110012 India
- CeNSCMR Department of Physics and Astronomy Seoul National University Seoul 08826 Republic of Korea
- Department of Materials Science amd Engineering Korea Advanced Institute of Science and Technology Daejeon 34141 Republic of Korea
- Department of Materials Science &, Engineering Inha University Incheon 22212 Republic of Korea
- Department of Materials Science and Engineering University of Wisconsin‐Madison Madison Wisconsin 53706 USA
- Center for Van der Waals Quantum Solids Institute for Basic Science Pohang 37673 Republic of Korea, Department of Semiconductor Engineering Pohang University of Science and Technology Pohang 37673 Republic of Korea
- Institute of Materials Technology Yeungnam University Gyeongsan 38541 Republic of Korea
Abstract Room‐temperature (RT) multiferroic materials have received significant research attention for various potential applications; however, their properties are not suitable for real‐world implementation. In this study, a nano‐scale localized flexoelectric effect is introduced to enhance the RT multiferroic performance of epitaxial bismuth iron oxide (BiFeO 3 ; BFO) thin films by embedding 10 mol% Ba(Cu 1/3 Nb 2/3 )O 3 (BCN) nano‐clusters into the host BFO film, which originally has a rhombohedral crystal structure. By utilizing nano‐clustering, a large out‐of‐plane coherent strain is localized around the nano‐clusters, resulting in a highly strained tetragonality of the BFO structure; subsequently, the films exhibit peculiar types of domains and domain walls, such as nano‐scale rotational vortices and antiparallel dipole configurations. These peculiar domain structures, which originate from the localized flexoelectric effect at the nano‐scale, enable excellent ferroelectric, ferromagnetic, and RT multiferroic magnetoelectric coupling. This study reveals that the local variation in the localized flexoelectric field around nano‐clusters considerably impacts the formation of unusual domain‐wall structures. This suggests that the controlled introduction of nano‐clusters with different crystal structures is promising for achieving the desired multiferroic properties.
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- FG02-06ER46327
- OSTI ID:
- 2526311
- Journal Information:
- Advanced Functional Materials, Journal Name: Advanced Functional Materials Journal Issue: 9 Vol. 35; ISSN 1616-301X
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- Germany
- Language:
- English
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