Pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sources

Mondal, Kali Prasanna; Gaowei, Mengjia; Echeverria, Elena; Evans-Lutterodt, Kenneth; Jordan-Sweet, Jean; Juffmann, Thomas; Karkare, Siddharth; Maxson, Jared; van der Molen, S. J.; Pennington, Chad; Saha, Pallavi; Smedley, John; Stam, W. G.; Tromp, Rudolf M.

doi:10.1038/s41598-025-87602-7

Title: Pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sources

Journal Article · 26 January 2025 · Scientific Reports

DOI: https://doi.org/10.1038/s41598-025-87602-7 · OSTI ID:2525853

^[1]; Gaowei, Mengjia ^[1]; Echeverria, Elena ^[2]; Evans-Lutterodt, Kenneth ^[1]; Jordan-Sweet, Jean ^[3]; Juffmann, Thomas ^[4]; Karkare, Siddharth ^[5]; Maxson, Jared ^[2]; van der Molen, S. J. ^[6]; Pennington, Chad ^[2]; Saha, Pallavi ^[7]; Smedley, John ^[8]; Stam, W. G. ^[6]; Tromp, Rudolf M. ^[9]

Brookhaven National Laboratory (BNL), Upton, NY (United States)
Cornell Univ., Ithaca, NY (United States). Cornell Laboratory for Accelerator-Based Sciences and Education
Brookhaven National Laboratory (BNL), Upton, NY (United States); IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center
Univ. of Vienna (Austria)
Arizona State Univ., Tempe, AZ (United States)
Leiden Univ. (Netherlands)
Brookhaven National Laboratory (BNL), Upton, NY (United States); Arizona State Univ., Tempe, AZ (United States)
Brookhaven National Laboratory (BNL), Upton, NY (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center; Leiden Univ. (Netherlands)

The development of high-brightness electron sources is critical to state-of-the-art electron accelerator applications like X-ray free electron laser (XFEL) and ultra-fast electron microscopy. Cesium telluride is chosen as the electron source material for multiple cutting-edge XFEL facilities worldwide. This manuscript presents the first demonstration of the growth of highly crystalized and epitaxial cesium telluride thin films on 4H-SiC and graphene/4H-SiC substrates with ultrasmooth film surfaces. The ordering of the film was characterized by in situ reflection high energy electron diffraction and multiple X-ray diagnostics. The results of the quantum efficiency performance for epitaxial cesium telluride photocathodes are also reported.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC), Nuclear Physics (NP)

Grant/Contract Number:: AC02-76SF00515; SC0012704

OSTI ID:: 2525853

Report Number(s):: BNL--227621-2025-JAAM

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 15; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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