Selective modulation of electronic transport in VO2 induced by 10 keV helium ion irradiation

Gurrola, Rebeca M.; Cain, John M.; Oh, Sangheon; Brown, Timothy D.; Jardali, Fatme; Schoell, Ryan M.; Yadav, Digvijay R.; Dong, Jiaqi; Smyth, Christopher M.; Pharr, Matt; Kumar, Suhas; Xie, Kelvin; Hattar, Khalid; Talin, A. Alec; Lu, Tzu-Ming; Shamberger, Patrick J.

doi:10.1063/5.0189562

Title: Selective modulation of electronic transport in VO₂ induced by 10 keV helium ion irradiation

Journal Article · 27 March 2024 · Journal of Applied Physics

DOI: https://doi.org/10.1063/5.0189562 · OSTI ID:2522702

^[1];

^[2];

^[3];

^[1];

^[2];

^[1]; Dong, Jiaqi ^[1];

^[2];

^[1];

^[3]; Xie, Kelvin ^[1];

^[4];

^[3];

^[2];

^[1]

Texas A&M University, College Station, TX (United States)
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sandia National Laboratories (SNL-CA), Livermore, CA (United States)
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); University of Tennessee, Knoxville, TN (United States)

Vanadium dioxide (VO₂) manifests an abrupt metal–insulator transition (MIT) from monoclinic to rutile phases, with potential use for tunable electronic and optical properties and spiking neuromorphic devices. Understanding pathways to modulate electronic transport in VO₂, as well as its response to irradiation (e.g., for space applications), is critical to better enable these applications. In this work, we investigate the selective modulation of electronic transport in VO₂ films subject to different 10 keV helium ion (He⁺) fluences. Under these conditions, the resistivity in the individual monoclinic and rutile phases varied by 50%–200%, while the MIT transformation temperature remains constant within 4 °C independent of irradiation fluence. Importantly, different trends in the resistivity of the monoclinic and rutile phases were observed both as a function of total He fluence as well as in films grown on different substrates (amorphous SiO₂/Si vs single crystal Al₂O₃). Through a combination of measurements including majority carrier sign via Seebeck, low frequency noise, and TEM, our investigation supports the presence of different kinds of point defects (V in; O in), which may arise due to grain boundary defect interactions. Our work suggests the utility of He irradiation for the selective modulation of VO₂ transport properties for neuromorphic, in contrast to other established but non-selective methods, like doping.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Reconfigurable Electronic Materials Inspired by Nonlinear Neuron Dynamics (REMIND); Texas A&M Engineering Experiment Station (TEES), Bryan, TX (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: NA0003525; SC0023353

OSTI ID:: 2522702

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 135; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (55)

The Dynamic Phase Transition Modulation of Ion-Liquid Gating VO ₂ Thin Film: Formation, Diffusion, and Recovery of Oxygen Vacancies Chen, Shi; Wang, Xi jun; Fan, Lele Advanced Functional Materials, Vol. 26, Issue 20 https://doi.org/10.1002/adfm.201505399	journal	March 2016
Thin Film Thermoelectric Metal-Organic Framework with High Seebeck Coefficient and Low Thermal Conductivity Erickson, Kristopher J.; Léonard, François; Stavila, Vitalie Advanced Materials, Vol. 27, Issue 22 https://doi.org/10.1002/adma.201501078	journal	April 2015
Harnessing the Metal–Insulator Transition of VO ₂ in Neuromorphic Computing Schofield, Parker; Bradicich, Adelaide; Gurrola, Rebeca M. Advanced Materials https://doi.org/10.1002/adma.202205294	journal	November 2022
Doping of VO2 thin films by ion implantation Ufert, K. -D. Physica Status Solidi (a), Vol. 42, Issue 1 https://doi.org/10.1002/pssa.2210420119	journal	July 1977
The two components of the crystallographic transition in VO2 Goodenough, John B. Journal of Solid State Chemistry, Vol. 3, Issue 4 https://doi.org/10.1016/0022-4596(71)90091-0	journal	November 1971
Tungsten doping into vanadium dioxide thermochromic films by high-energy ion implantation and thermal annealing Jin, P.; Nakao, S.; Tanemura, S. Thin Solid Films, Vol. 324, Issue 1-2 https://doi.org/10.1016/S0040-6090(98)00362-9	journal	July 1998
High-energy W ion implantation into VO2 thin film Jin, P.; Nakao, S.; Tanemura, S. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 141, Issue 1-4 https://doi.org/10.1016/S0168-583X(98)00177-3	journal	May 1998
Measurement of 1/f noise and its application in materials science Raychaudhuri, A. K. Current Opinion in Solid State and Materials Science, Vol. 6, Issue 1 https://doi.org/10.1016/S1359-0286(02)00025-6	journal	February 2002
The identification of defect structures for oxygen pressure dependent VO2 crystal films Fan, Shaojuan; Fan, Lele; Li, Qiang Applied Surface Science, Vol. 321 https://doi.org/10.1016/j.apsusc.2014.10.057	journal	December 2014
SRIM – The stopping and range of ions in matter (2010) Ziegler, James F.; Ziegler, M. D.; Biersack, J. P. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12 https://doi.org/10.1016/j.nimb.2010.02.091	journal	June 2010
Tailoring of the thermomechanical performance of VO2 nanowire bimorph actuators by ion implantation Karl, H.; Peyinghaus, S. C. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 365 https://doi.org/10.1016/j.nimb.2015.04.027	journal	December 2015
Augmentation of thermoelectric performance of VO2 thin films irradiated by 200MeV Ag9+-ions Khan, G. R.; Kandasami, A.; Bhat, B. A. Radiation Physics and Chemistry, Vol. 123 https://doi.org/10.1016/j.radphyschem.2016.02.020	journal	June 2016
Structural and electrical properties of Mg-doped vanadium dioxide thin films via room-temperature ion implantation Mabakachaba, B. M.; Madiba, I. G.; Kennedy, J. Surfaces and Interfaces, Vol. 20 https://doi.org/10.1016/j.surfin.2020.100590	journal	September 2020
Electrical and optical switching properties of ion implanted VO2 thin films Heckman, Emily M.; Gonzalez, Leonel P.; Guha, Shekhar Thin Solid Films, Vol. 518, Issue 1 https://doi.org/10.1016/j.tsf.2009.05.063	journal	November 2009
Active Optical Metasurfaces Based on Defect-Engineered Phase-Transition Materials Rensberg, Jura; Zhang, Shuyan; Zhou, You Nano Letters, Vol. 16, Issue 2 https://doi.org/10.1021/acs.nanolett.5b04122	journal	January 2016
Control of Structural and Electrical Transitions of VO ₂ Thin Films Moatti, Adele; Sachan, Ritesh; Prater, John ACS Applied Materials & Interfaces, Vol. 9, Issue 28 https://doi.org/10.1021/acsami.7b05620	journal	July 2017
Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition Park, Helen Hejin; Larrabee, Thomas J.; Ruppalt, Laura B. ACS Omega, Vol. 2, Issue 4 https://doi.org/10.1021/acsomega.7b00059	journal	April 2017
Atomic Hourglass and Thermometer Based on Diffusion of a Mobile Dopant in VO₂ Sellers, Diane G.; Braham, Erick J.; Villarreal, Ruben Journal of the American Chemical Society, Vol. 142, Issue 36 https://doi.org/10.1021/jacs.0c07152	journal	August 2020
Strain Dynamics of Ultrathin VO ₂ Film Grown on TiO ₂ (001) and the Associated Phase Transition Modulation Fan, L. L.; Chen, S.; Luo, Z. L. Nano Letters, Vol. 14, Issue 7 https://doi.org/10.1021/nl501480f	journal	June 2014
Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors Yi, Wei; Savel'ev, Sergey E.; Medeiros-Ribeiro, Gilberto Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms11142	journal	April 2016
Reversible phase modulation and hydrogen storage in multivalent VO2 epitaxial thin films Yoon, Hyojin; Choi, Minseok; Lim, Tae-Won Nature Materials, Vol. 15, Issue 10 https://doi.org/10.1038/nmat4692	journal	July 2016
Biological plausibility and stochasticity in scalable VO2 active memristor neurons Yi, Wei; Tsang, Kenneth K.; Lam, Stephen K. Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-07052-w	journal	November 2018
Oxygen vacancy induced band gap narrowing of ZnO nanostructures by an electrochemically active biofilm Ansari, Sajid Ali; Khan, Mohammad Mansoob; Kalathil, Shafeer Nanoscale, Vol. 5, Issue 19 https://doi.org/10.1039/c3nr02678g	journal	January 2013
Optical switching of coherent VO ₂ precipitates formed in sapphire by ion implantation and annealing Gea, Laurence A.; Boatner, L. A. Applied Physics Letters, Vol. 68, Issue 22 https://doi.org/10.1063/1.116429	journal	May 1996
Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films Brassard, D.; Fourmaux, S.; Jean-Jacques, M. Applied Physics Letters, Vol. 87, Issue 5 https://doi.org/10.1063/1.2001139	journal	August 2005
Semiconductor-metal transition characteristics of VO2 thin films grown on c- and r-sapphire substrates Yang, Tsung-Han; Aggarwal, Ravi; Gupta, Alok Journal of Applied Physics, Vol. 107, Issue 5 https://doi.org/10.1063/1.3327241	journal	March 2010
VO2 multidomain heteroepitaxial growth and terahertz transmission modulation Chen, Changhong; Zhu, Yanhan; Zhao, Yong Applied Physics Letters, Vol. 97, Issue 21 https://doi.org/10.1063/1.3519361	journal	November 2010
Spectroscopic evidence of the formation of (V,Ti)O ₂ solid solution in VO ₂ thinner films grown on TiO ₂ (001) substrates Muraoka, Y.; Saeki, K.; Eguchi, R. Journal of Applied Physics, Vol. 109, Issue 4 https://doi.org/10.1063/1.3549835	journal	February 2011
Influence of defects on structural and electrical properties of VO ₂ thin films Chen, Changhong; Zhao, Yong; Pan, Xuan Journal of Applied Physics, Vol. 110, Issue 2 https://doi.org/10.1063/1.3609084	journal	July 2011
Evidence of direct correlation between out-of-plane lattice parameter and metal-insulator transition temperature in oxygen-depleted manganite thin films Orgiani, P.; Petrov, A. Yu.; Ciancio, R. Applied Physics Letters, Vol. 100, Issue 4 https://doi.org/10.1063/1.3676268	journal	January 2012
The grain size dependence of the resistance behaviors in doped lanthanum manganite polycrystalline films Liu, Xiangdong; Jiao, Zhengkuan; Nakamura, Keikichi Journal of Applied Physics, Vol. 87, Issue 5 https://doi.org/10.1063/1.372197	journal	March 2000
Transport behavior and electronic structure of phase pure VO ₂ thin films grown on c -plane sapphire under different O ₂ partial pressure Kittiwatanakul, Salinporn; Laverock, Jude; Newby, Dave Journal of Applied Physics, Vol. 114, Issue 5 https://doi.org/10.1063/1.4817174	journal	August 2013
Optical switching and photoluminescence in erbium-implanted vanadium dioxide thin films Lim, Herianto; Stavrias, Nikolas; Johnson, Brett C. Journal of Applied Physics, Vol. 115, Issue 9 https://doi.org/10.1063/1.4867481	journal	March 2014
Resistance noise at the metal–insulator transition in thermochromic VO ₂ films Topalian, Zareh; Li, Shu-Yi; Niklasson, Gunnar A. Journal of Applied Physics, Vol. 117, Issue 2 https://doi.org/10.1063/1.4905739	journal	January 2015
Multi-timescale investigation of radiation damage near TiO ₂ rutile grain boundaries Bai, Xian-Ming; Uberuaga, Blas P. Philosophical Magazine, Vol. 92, Issue 12 https://doi.org/10.1080/14786435.2011.648229	journal	April 2012
Experimental evidence of correlation between 1/fnoise level and metal-to-insulator transition temperature in epitaxial La_0.7Sr_0.3MnO₃thin films Méchin, L.; Wu, S.; Guillet, B. Journal of Physics D: Applied Physics, Vol. 46, Issue 20 https://doi.org/10.1088/0022-3727/46/20/202001	journal	May 2013
Comprehensive studies of interfacial strain and oxygen vacancy on metal–insulator transition of VO ₂ film Fan, L. L.; Chen, S.; Liao, G. M. Journal of Physics: Condensed Matter, Vol. 28, Issue 25 https://doi.org/10.1088/0953-8984/28/25/255002	journal	May 2016
Electron field emission of a nitrogen-doped TiO₂nanotube array Liu, Gang; Li, Feng; Wang, Da-Wei Nanotechnology, Vol. 19, Issue 2 https://doi.org/10.1088/0957-4484/19/02/025606	journal	December 2007
Computer Studies of the Slowing Down of Energetic Atoms in Crystals Robinson, Mark T.; Oen, Ordean S. Physical Review, Vol. 132, Issue 6 https://doi.org/10.1103/PhysRev.132.2385	journal	December 1963
Electronic Properties of V O 2 near the Semiconductor-Metal Transition Berglund, C. N.; Guggenheim, H. J. Physical Review, Vol. 185, Issue 3 https://doi.org/10.1103/PhysRev.185.1022	journal	September 1969
Efficient and Hysteresis-Free Field Effect Modulation of Ambipolarly Doped Vanadium Dioxide Nanowires Peng, Xingyue; Yang, Yiming; Hou, Yasen Physical Review Applied, Vol. 5, Issue 5 https://doi.org/10.1103/PhysRevApplied.5.054008	journal	May 2016
Evolution of Metallicity in Vanadium Dioxide by Creation of Oxygen Vacancies Zhang, Zhen; Zuo, Fan; Wan, Chenghao Physical Review Applied, Vol. 7, Issue 3 https://doi.org/10.1103/PhysRevApplied.7.034008	journal	March 2017
Disorder recovers the Wiedemann-Franz law in the metallic phase of VO 2 Jin, Lei; Zeltmann, Steven E.; Choe, Hwan Sung Physical Review B, Vol. 102, Issue 4 https://doi.org/10.1103/PhysRevB.102.041120	journal	July 2020
Stress relaxation effect on transport properties of strained vanadium dioxide epitaxial thin films Nagashima, Kazuki; Yanagida, Takeshi; Tanaka, Hidekazu Physical Review B, Vol. 74, Issue 17 https://doi.org/10.1103/PhysRevB.74.172106	journal	November 2006
Large kinetic asymmetry in the metal-insulator transition nucleated at localized and extended defects Fan, W.; Cao, J.; Seidel, J. Physical Review B, Vol. 83, Issue 23 https://doi.org/10.1103/PhysRevB.83.235102	journal	June 2011
Effect of disorder on the metal-insulator transition of vanadium oxides: Local versus global effects Ramirez, Juan Gabriel; Saerbeck, Thomas; Wang, Siming Physical Review B, Vol. 91, Issue 20 https://doi.org/10.1103/PhysRevB.91.205123	journal	May 2015
Probing the Critical Nucleus Size in the Metal-Insulator Phase Transition of VO2 Jin, Lei; Shi, Yin; Allen, Frances I. Physical Review Letters, Vol. 129, Issue 24 https://doi.org/10.1103/PhysRevLett.129.245701	journal	December 2022
Anisotropic Energy Loss of Light Particles of MeV Energies in Thin Silicon Single Crystals Erginsoy, C.; Wegner, H. E.; Gibson, W. M. Physical Review Letters, Vol. 13, Issue 17 https://doi.org/10.1103/PhysRevLett.13.530	journal	October 1964
Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature Morin, F. J. Physical Review Letters, Vol. 3, Issue 1 https://doi.org/10.1103/PhysRevLett.3.34	journal	July 1959
Alteration in electrical and infrared switching properties of vanadium oxides due to proton irradiation Leone, A.; Trione, A. M.; Junga, F. IEEE Transactions on Nuclear Science, Vol. 37, Issue 6 https://doi.org/10.1109/23.101185	journal	December 1990
Substrate effects on metal-insulator transition characteristics of rf-sputtered epitaxial VO ₂ thin films Cui, Yanjie; Ramanathan, Shriram Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 29, Issue 4 https://doi.org/10.1116/1.3584817	journal	July 2011
Effects of microstructure and nonstoichiometry on electrical properties of vanadium dioxide films Kusano, Eiji; Theil, Jeremy A. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, Issue 3 https://doi.org/10.1116/1.576277	journal	May 1989
Efficient Annealing of Radiation Damage Near Grain Boundaries via Interstitial Emission Bai, X. M.; Voter, A. F.; Hoagland, R. G. Science, Vol. 327, Issue 5973 https://doi.org/10.1126/science.1183723	journal	March 2010
Electronic excitation induced controlled modifications of semiconductor-to-metal transition in epitaxial VO₂ thin films Gupta, Alok; Singhal, Rahul; Narayan, Jagdish Journal of Materials Research, Vol. 26, Issue 23 https://doi.org/10.1557/jmr.2011.392	journal	December 2011
Texture Analysis with MTEX – Free and Open Source Software Toolbox Bachmann, F.; Hielscher, Ralf; Schaeben, Helmut Solid State Phenomena, Vol. 160 https://doi.org/10.4028/www.scientific.net/SSP.160.63	journal	February 2010

Similar Records

Modulating charge transport via 2 MeV He⁺ irradiation in VO₂

Journal Article · 2026 · Journal of Applied Physics · OSTI ID:3022936

Gurrola, Rebeca M.; Bradicich, Adelaide Maria; Jardali, Fatme; +17 more

Purely electronic insulator-metal transition in rutile VO₂

Journal Article · 2025 · Nature Communications · OSTI ID:2572790

Cheng, Shaobo; Navarro, Henry; Wang, Zishen; +13 more

Inherent stochasticity during insulator–metal transition in VO₂

Journal Article · 2021 · Proceedings of the National Academy of Sciences of the United States of America · OSTI ID:1823599

Cheng, Shaobo; Lee, Min-Han; Tran, Richard; +10 more

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
Crystallographic defects
Electronic transport
Epitaxy
Ion radiation effects
Neuromorphic engineering
Phase transitions
Polycrystalline material
Transmission electron microscopy
Transport properties

Title: Selective modulation of electronic transport in VO2 induced by 10 keV helium ion irradiation

Citation Formats

References (55)

Similar Records

Related Subjects

Title: Selective modulation of electronic transport in VO₂ induced by 10 keV helium ion irradiation