Pick-and-Place Transfer of Arbitrary-Metal Electrodes for van der Waals Device Fabrication
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- Macau University of Science and Technology (MUST), Zhuhai (China); Monash University, Melbourne, VIC (Australia)
- Monash University, Melbourne, VIC (Australia)
- Monash University, Melbourne, VIC (Australia); University of Wollongong, NSW (Australia)
- Monash University, Melbourne, VIC (Australia); University of Wollongong, NSW (Australia); Australia Nuclear Science and Technology Organisation (ANSTO), Lucas Heights, NSW (Australia)
- Macau University of Science and Technology (MUST), Zhuhai (China)
- Columbia University, New York, NY (United States)
- Royal Melbourne Institute of Technology (RMIT) University, Melbourne, VIC (Australia)
- National Institute for Materials Science (NIMS), Tsukuba (Japan)
- Queensland University of Technology, Brisbane, QLD (Australia)
Van der Waals electrode integration is a promising strategy to create nearly perfect interfaces between metals and 2D materials, with advantages such as eliminating Fermi-level pinning and reducing contact resistance. However, the lack of a simple, generalizable pick-and-place transfer technology has greatly hampered the wide use of this technique. Here, we demonstrate the pick-and-place transfer of prefabricated electrodes from reusable polished hydrogenated diamond substrates without the use of any sacrificial layers due to the inherent low-energy and dangling-bond-free nature of the hydrogenated diamond surface. The technique enables transfer of arbitrary-metal electrodes and an electrode array, as demonstrated by successful transfer of eight different elemental metals with work functions ranging from 4.22 to 5.65 eV. We also demonstrate the electrode array transfer for large-scale device fabrication. The mechanical transfer of metal electrodes from diamond to van der Waals materials creates atomically smooth interfaces with no interstitial impurities or disorder, as observed with cross-section high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy. As a demonstration of its device application, we use the diamond transfer technique to create metal contacts to monolayer transition metal dichalcogenide semiconductors with high-work-function Pd, low-work-function Ti, and semimetal Bi to create n- and p-type field-effect transistors with low Schottky barrier heights. We also extend this technology to air-sensitive materials (trilayer 1T’ WTe2) and other applications such as ambipolar transistors, Schottky diodes, and optoelectronics. This highly reliable and reproducible technology paves the way for new device architectures and high-performance devices.
- Research Organization:
- Princeton Plasma Physics Laboratory (PPPL), Princeton, NJ (United States)
- Sponsoring Organization:
- Australian Research Council (ARC); Japan Society for the Promotion of Science (JSPS) KAKENHI; National Natural Science Foundation of China (NSFC); Science and Technology Development Fund (FDCT); USDOE
- Grant/Contract Number:
- AC02-09CH11466
- OSTI ID:
- 2520535
- Journal Information:
- ACS Nano, Journal Name: ACS Nano Journal Issue: 3 Vol. 19; ISSN 1936-0851
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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