Title: Electrical control of magnetism by electric field and current-induced torques

Journal Article · · Reviews of Modern Physics
 [1];  [2];  [3]; ORCiD logo [4]; ORCiD logo [3]
  1. Laboratoire Albert Fert, Palaiseau (France); Centre National de la Recherche Scientifique (CNRS), Palaiseau (France); Thales, Palaiseau (France); Univ. Paris-Saclay, Palaiseau (France); Univ. of the Basque Country (UPV/EHU), San Sebastian (Spain); Donostia International Physics Center (DIPC), San Sebastian (Spain)
  2. University of California, Berkeley, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
  3. Laboratoire Albert Fert, Palaiseau (France); Centre National de la Recherche Scientifique (CNRS), Palaiseau (France); Thales, Palaiseau (France); Univ. Paris-Saclay, Palaiseau (France)
  4. CIC nanoGUNE BRTA, Donostia (Spain); Basque Foundation for Science, Bilbao (Spain). IKERBASQUE

The remanent magnetization of ferromagnets has long been studied and used to store binary information. While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility of doing it by electrical means instead. In the 1990s, Slonczewski and Berger formulated the concept of current-induced spin torques in magnetic multilayers through which a spin-polarized current generated by a first ferromagnet may be used to switch the magnetization of a second one. This discovery drove the development of spin-transfer-torque magnetic random-access memories (MRAMs). More recent fundamental research revealed other types of current-induced torques named spin-orbit torques (SOTs) and will lead to a new generation of devices including SOT MRAMs and skyrmion-based devices. Parallel to these advances, multiferroics and their magnetoelectric coupling, first investigated experimentally in the 1960s, experienced a renaissance. Dozens of multiferroic compounds with new magnetoelectric coupling mechanisms were discovered and high-quality multiferroic films were synthesized (notably of BiFeO3), also leading to novel device concepts for information and communication technology such as the magnetoelectric spin-orbit (MESO) transistor. The story of the electrical switching of magnetization, which is discussed in this review, is that of a dance between fundamental research (in spintronics, condensed matter physics, and materials science) and technology (MRAMs, MESO transistors, microwave emitters, spin diodes, skyrmion-based devices, components for neuromorphics, etc.). This pas de deux has led to major scientific and technological breakthroughs in recent decades (such as the conceptualization of pure spin currents, the observation of magnetic skyrmions, and the discovery of spin-charge interconversion effects). As a result, this field has not only propelled MRAMs into consumer electronics products but also fueled discoveries in adjacent research areas such as ferroelectrics or magnonics. Here, in this review, recent advances in the control of magnetism by electric fields and by current-induced torques are covered. Fundamental concepts in these two directions are reviewed first, their combination is then discussed, and finally current various families of devices harnessing the electrical control of magnetic properties for various application fields are addressed. The review concludes by giving perspectives in terms of both emerging fundamental physics concepts and new directions in materials science.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
European Research Council (ERC); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
2505041
Journal Information:
Reviews of Modern Physics, Journal Name: Reviews of Modern Physics Journal Issue: 1 Vol. 96; ISSN 0034-6861
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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