Discovery of a layered multiferroic compound Cu1-xMn1+ySiTe3 with strong magnetoelectric coupling

De, Chandan; Liu, Yu; Ayyagari, Sai Gayathri; Zheng, Boyang; Kelley, Kyle P.; Hazra, Sankalpa; He, Jingyang; Pawledzio, Sylwia; Mali, Subin; Guchhait, Samaresh; Yoshida, Suguru; Guan, Yingdong; Lee, Seng Huat; Sretenovic, Milos; Ke, Xianglin; Wang, Le; Engelhard, Mark H.; Du, Yingge; Xie, Weiwei; Wang, Xiaoping; Crespi, Vincent H.; Alem, Nasim; Gopalan, Venkatraman; Zhang, Qiang; Mao, Zhiqiang

doi:10.1126/sciadv.adp9379

Title: Discovery of a layered multiferroic compound Cu_1-xMn_1+ySiTe₃ with strong magnetoelectric coupling

Journal Article · 02 January 2025 · Science Advances

DOI: https://doi.org/10.1126/sciadv.adp9379 · OSTI ID:2502158

De, Chandan ^[1];

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Pennsylvania State Univ., University Park, PA (United States); Okinawa Institute of Science and Technology (Japan)
Pennsylvania State Univ., University Park, PA (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Howard Univ., Washington, DC (United States)
Michigan State Univ., East Lansing, MI (United States)
Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
Pacific Northwest National Laboratory (PNNL), Richland, WA (United States). Environmental Molecular Sciences Laboratory (EMSL)

Multiferroic materials host both ferroelectricity and magnetism, offering potential for magnetic memory and spin transistor applications. Here, we report a multiferroic chalcogenide semiconductor Cu_1-xMn_1+ySiTe₃ (0.04 ≤ x ≤ 0.26; 0.03 ≤ y ≤ 0.15), which crystallizes in a polar monoclinic structure (Pm space group). It exhibits a canted antiferromagnetic state below 35 kelvin, with magnetic hysteresis and remanent magnetization under 15 kelvin. We demonstrate multiferroicity and strong magnetoelectric coupling through magnetodielectric and magnetocurrent measurements. At 10 kelvin, the magnetically induced electric polarization reaches ~0.8 microcoulombs per square centimeter, comparable to the highest value in oxide multiferroics. We also observe possible room-temperature ferroelectricity. Given that multiferroicity is very rare among transition metal chalcogenides, our finding sets up a unique materials platform for designing multiferroic chalcogenides.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); National Science Foundation (NSF)

Grant/Contract Number:: SC0024943; SC0012375; SC0019259; AC05-00OR22725

OSTI ID:: 2502158

Journal Information:: Science Advances, Journal Name: Science Advances Journal Issue: 1 Vol. 11; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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