Assessing the reliability of SiC MOSFET through inverter-like accelerated test vs. power cycling test

Abbaszada, Mohammad A.; Gajanur, Nanditha; Mazumder, Sudip K.

doi:10.1016/j.microrel.2025.115589

Title: Assessing the reliability of SiC MOSFET through inverter-like accelerated test vs. power cycling test

Journal Article · 01 February 2025 · Microelectronics and Reliability

DOI: https://doi.org/10.1016/j.microrel.2025.115589 · OSTI ID:2500976

Abbaszada, Mohammad A.; Gajanur, Nanditha; Mazumder, Sudip K.

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Research Organization:: University of Maryland, College Park, MD (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: EE0009349

OSTI ID:: 2500976

Journal Information:: Microelectronics and Reliability, Journal Name: Microelectronics and Reliability Journal Issue: C Vol. 165; ISSN 0026-2714

Publisher:: ElsevierCopyright Statement

Country of Publication:: United Kingdom

Language:: English

References (18)

Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs Aichinger, Thomas; Rescher, Gerald; Pobegen, Gregor Microelectronics Reliability, Vol. 80 https://doi.org/10.1016/j.microrel.2017.11.020	journal	January 2018
Comparative Study of 2SiC&4Si Hybrid Configuration Schemes in ANPC Inverter Feng, Zhijian; Zhang, Xing; Yu, Shaolin IEEE Access, Vol. 8 https://doi.org/10.1109/ACCESS.2020.2974554	journal	January 2020
Investigation on Degradation of SiC MOSFET Under Accelerated Stress in a PFC Converter Jiang, Xi; Wang, Jun; Chen, Jianjun IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 9, Issue 4 https://doi.org/10.1109/JESTPE.2020.2988447	journal	August 2021
Aging Mechanisms and Accelerated Lifetime Tests for SiC MOSFETs: An Overview Pu, Shi; Yang, Fei; Vankayalapati, Bhanu Teja IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 10, Issue 1 https://doi.org/10.1109/JESTPE.2021.3110476	journal	February 2022
Failure Analysis of the dc-dc Converter: A Comprehensive Survey of Faults and Solutions for Improving Reliability Ferreira Costa, Levy; Liserre, Marco IEEE Power Electronics Magazine, Vol. 5, Issue 4 https://doi.org/10.1109/MPEL.2018.2874345	journal	December 2018
A Comprehensive Overview of Reliability Assessment Strategies and Testing of Power Electronics Converters Hosseinabadi, Farzad; Chakraborty, Sajib; Bhoi, Sachin Kumar IEEE Open Journal of Power Electronics, Vol. 5 https://doi.org/10.1109/OJPEL.2024.3379294	journal	January 2024
Comparative Analysis of Bond Wire Degradation in Power Modules During DC and AC Power Cycling Zhang, Kaichen; Iannuzzo, Francesco; Blaabjerg, Frede 2024 IEEE 15th International Symposium on Power Electronics for Distributed Generation Systems (PEDG) https://doi.org/10.1109/PEDG61800.2024.10667438	conference	June 2024
Online Monitoring Bond Wires Fault of SiC MOSFETs With Kelvin Package Based on Turn-on Source Voltage Ringing Xie, Minghang; Sun, Pengju; Ouyang, Wenyuan IEEE Transactions on Industrial Electronics, Vol. 71, Issue 8 https://doi.org/10.1109/TIE.2023.3329162	journal	August 2024
Overview of Real-Time Lifetime Prediction and Extension for SiC Power Converters Ni, Ze; Lyu, Xiaofeng; Yadav, Om Prakash IEEE Transactions on Power Electronics, Vol. 35, Issue 8 https://doi.org/10.1109/TPEL.2019.2962503	journal	August 2020
A Method for the Measurement of the Threshold-Voltage Shift of SiC MOSFETs During Power Cycling Tests Kempiak, Carsten; Lindemann, Andreas IEEE Transactions on Power Electronics, Vol. 36, Issue 6 https://doi.org/10.1109/TPEL.2020.3039424	journal	June 2021
A Fast ON-State Voltage Measurement Circuit for Power Devices Characterization Rossetto, Leopoldo; Spiazzi, Giorgio IEEE Transactions on Power Electronics, Vol. 37, Issue 5 https://doi.org/10.1109/TPEL.2021.3129613	journal	May 2022
Difference Between the PWM and Standard DC Power Cycling Tests Based on the Finite-Element Simulation Xie, Luhong; Wu, Lixin; Deng, Erping IEEE Transactions on Power Electronics, Vol. 38, Issue 7 https://doi.org/10.1109/TPEL.2023.3262404	journal	July 2023
High Cycle Fatigue Testing of Silicon IGBT Devices Under Application-Close Conditions Schwabe, Christian; Thönelt, Nick; Lutz, Josef IEEE Transactions on Power Electronics, Vol. 38, Issue 11 https://doi.org/10.1109/TPEL.2023.3296269	journal	November 2023
Gate-Oxide Degradation Monitoring of SiC MOSFETs Based on Transfer Characteristic With Temperature Compensation Farhadi, Masoud; Vankayalapati, Bhanu Teja; Sajadi, Rahman IEEE Transactions on Transportation Electrification, Vol. 10, Issue 1 https://doi.org/10.1109/TTE.2023.3265386	journal	March 2024
AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters Farhadi, Masoud; Vankayalapati, Bhanu Teja; Sajadi, Rahman IEEE Transactions on Vehicular Technology, Vol. 72, Issue 10 https://doi.org/10.1109/TVT.2023.3271251	journal	October 2023
On-State Voltage Measurement of Fast Switching Power Semiconductors Guacci, Mattia; Bortis, Dominik; Kolar, Johann W. CPSS Transactions on Power Electronics and Applications, Vol. 3, Issue 2 https://doi.org/10.24295/CPSSTPEA.2018.00016	journal	June 2018
An Online On-State Voltage Measurement Circuit With Series Diode Clamp for SiC MOSFETs CPSS Transactions on Power Electronics and Applications, Vol. 8, Issue 1 https://doi.org/10.24295/CPSSTPEA.2023.00003	journal	March 2023
Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test Huang, Tianqi; Singh, Bhanu Pratap; Liu, Yongqian Energies, Vol. 17, Issue 11 https://doi.org/10.3390/en17112557	journal	May 2024

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Related Subjects

14 SOLAR ENERGY
Inverter-like accelerated test
Lifetime evaluation
Power cycling tests
Reliability assessment
SiC MOSFET

Title: Assessing the reliability of SiC MOSFET through inverter-like accelerated test vs. power cycling test

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References (18)

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