Optical and electrical properties of proton-implanted p-GaSb for electrical isolation

Nikor, Sk Saud; Sumon, Md Islam; Sankar, Shrivatch; Ma, Like; Patel, Victor Jay; Hawkins, Samuel D.; Addamane, Sadhvikas Jayachandra; Arafin, Shamsul

doi:10.35848/1882-0786/ad9377

Title: Optical and electrical properties of proton-implanted p-GaSb for electrical isolation

Journal Article · 15 December 2024 · Applied Physics Express

DOI: https://doi.org/10.35848/1882-0786/ad9377 · OSTI ID:2498422

^[1]; Sumon, Md Islam ^[1]; Sankar, Shrivatch ^[1]; Ma, Like ^[1]; Patel, Victor Jay ^[2]; Hawkins, Samuel D. ^[2]; Addamane, Sadhvikas Jayachandra ^[3];

^[1]

The Ohio State Univ., Columbus, OH (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

The effect of proton implantation as isolation implant and subsequent annealing on the optical absorption and electrical resistivity of low-bandgap p-GaSb is reported. The measured transmittance spectra indicates that implantation creates a distribution of energy levels extending into the bandgap. Electrical measurements show that the average sheet resistance of the implanted layer increases only by an order of magnitude from its pre-implantation value at a proton dose of ~10¹³cm^-2 followed by 200 °C annealing. It is also shown that annealing reduces the implantation-induced optical absorption while still retaining a high electrical resistivity.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 2498422

Report Number(s):: SAND--2025-00039J

Journal Information:: Applied Physics Express, Journal Name: Applied Physics Express Journal Issue: 12 Vol. 17; ISSN 1882-0778

Publisher:: Japan Society of Applied PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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