Epitaxy of Emerging Materials and Advanced Heterostructures for Microelectronics and Quantum Sciences

Lee, Yeonjoo; Choi, Soo Ho; Kim, Hyunseok; Yoo, Jinkyoung

doi:10.1002/smtd.202401815

Title: Epitaxy of Emerging Materials and Advanced Heterostructures for Microelectronics and Quantum Sciences

Journal Article · 06 January 2025 · Small Methods

DOI: https://doi.org/10.1002/smtd.202401815 · OSTI ID:2497378

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Los Alamos National Laboratory (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)
University of Illinois Urbana‐Champaign, IL (United States)

Epitaxy, a process to prepare crystalline materials in nanostructures and thin films, is the core technology for preparing high-quality materials as a key enabler of next-generation microelectronics and quantum information system. Progress in epitaxy has been expanding the choice of materials and their heterostructures beyond the combinations limited by materials compatibility. However, the improvement of material quality, physical implementation of materials with unique properties, and integration of incommensurate materials in an architecture have been the challenging issues. Emerging materials, including 2D materials and quantum materials, have opened opportunities to study epitaxy mechanisms and realize various functional devices. Acceleration of discovery and progress in epitaxy research should be accomplished by “understanding of epitaxy under various circumstances at multiple length scales” and “integration of experiments and models.” In the perspective, a basic summary of the status of epitaxially grown materials, the challenges in epitaxy research, and integration of modeling epitaxy and ultimate control of the epitaxy process with advanced characterization techniques are discussed.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: Ministry of Science and ICT (MSIT); National Research Foundation of Korea (NRF); National Science Foundation (NSF); USDOE; USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: 89233218CNA000001; NA0003525

OSTI ID:: 2497378

Report Number(s):: LA-UR--24-33429

Journal Information:: Small Methods, Journal Name: Small Methods Journal Issue: 8 Vol. 9; ISSN 2366-9608

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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