Molecular beam epitaxy of superconducting zirconium nitride on GaN substrates

May, Brelon J.; Regmi, Sabin; Khanolkar, Amey R.; Buturlim, Volodymyr; Cresswell, Zachery E.; Vallejo, Kevin D.; Gofryk, Krzysztof; Hurley, David H.

doi:10.1063/5.0242982

Title: Molecular beam epitaxy of superconducting zirconium nitride on GaN substrates

Journal Article · 24 December 2024 · AIP Advances

DOI: https://doi.org/10.1063/5.0242982 · OSTI ID:2483710

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Epitaxial integration of metals and semiconductors can enable enhanced performance and novel functionality. Achieving such pristine interfaces with superconducting materials is of increasing interest for quantum devices and detectors, but the experimental demonstration remains challenging, given the very limited studies on single crystalline systems. To expand the potential materials for these systems, this work explores the deposition of zirconium nitride superconducting thin films on GaN substrates at various temperatures using molecular beam epitaxy. A general trend of decreasing superconducting critical temperature is observed as the deposition temperature is reduced. The optical properties reveal a transition from metallic to dielectric behavior with colder deposition. The plasma frequency of the metallic films is also observed to be a function of growth temperature. These results pave the way for the integration of a highly tunable metal nitride with a well-established semiconductor system.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: NONE; AC07-05ID14517

OSTI ID:: 2483710

Journal Information:: AIP Advances, Journal Name: AIP Advances Journal Issue: 12 Vol. 14; ISSN 2158-3226

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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