Nonvolatile electrochemical memory at 600°C enabled by composition phase separation

Li, Jingxian; Jalbert, Andrew J.; Lee, Sangyong; Simakas, Leah S.; Geisler, Noah J.; Watkins, Virgil J.; Cline, Laszlo A.; Fuller, Elliot J.; Talin, A. Alec; Li, Yiyang

doi:10.1016/j.device.2024.100623

Title: Nonvolatile electrochemical memory at 600°C enabled by composition phase separation

Journal Article · 04 December 2024 · Device

DOI: https://doi.org/10.1016/j.device.2024.100623 · OSTI ID:2483388

Li, Jingxian ^[1]; Jalbert, Andrew J. ^[1]; Lee, Sangyong ^[1]; Simakas, Leah S. ^[1]; Geisler, Noah J. ^[1]; Watkins, Virgil J. ^[1]; Cline, Laszlo A. ^[1]; Fuller, Elliot J. ^[2]; Talin, A. Alec ^[2];

^[1]

Univ. of Michigan, Ann Arbor, MI (United States)
Sandia National Lab. (SNL-CA), Livermore, CA (United States)

Silicon-based microelectronics are limited to ~150°C and therefore not suitable for the extremely high temperatures in aerospace, energy, and space applications. While wide-band-gap semiconductors can provide high-temperature logic, nonvolatile memory devices at high temperatures have been challenging. In this work, we develop a nonvolatile electrochemical memory cell that stores and retains analog and digital information at temperatures as high as 600°C. Through correlative scanning transmission electron microscopy, we show that this high-temperature information retention is a result of composition phase separation between the oxidized and reduced forms of amorphous tantalum oxide. This result demonstrates a memory concept that is resilient at extreme temperatures and reveals phase separation as the principal mechanism that enables nonvolatile information storage in these electrochemical memory cells.

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Research Organization:: Sandia National Laboratories (SNL-CA), Livermore, CA (United States)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 2483388

Report Number(s):: SAND--2024-16938J

Journal Information:: Device, Journal Name: Device Journal Issue: 3 Vol. 3; ISSN 2666-9986

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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42 ENGINEERING
electrochemical memory
extreme environments
high-temperature electronics
nonvolatile memory
phase separation
resistive memory
tantalum oxide

Title: Nonvolatile electrochemical memory at 600°C enabled by composition phase separation

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