GaAs Solar Cells Grown Directly on V-Groove Si Substrates

Saenz, Theresa E.; Boyer, Jacob; Mangum, John S.; Neumann, Anica N.; Selvidge, Jennifer; Collins, Sarah A.; Young, Michelle S.; Johnston, Steven W.; Steiner, Myles A.; France, Ryan M.; McMahon, William E.; Zimmerman, Jeramy D.; Warren, Emily L.

doi:10.1021/acsami.4c18928

Title: GaAs Solar Cells Grown Directly on V-Groove Si Substrates

Journal Article · 17 December 2024 · ACS Applied Materials and Interfaces

DOI: https://doi.org/10.1021/acsami.4c18928 · OSTI ID:2482615

^[1];

^[2];

^[2]; Neumann, Anica N. ^[1]; Selvidge, Jennifer ^[2]; Collins, Sarah A. ^[2]; Young, Michelle S. ^[2]; Johnston, Steven W. ^[2]; Steiner, Myles A. ^[2]; France, Ryan M. ^[2];

^[2];

^[3];

^[2]

National Renewable Energy Laboratory, Golden, Colorado 80401, United States, Department of Physics, Colorado School of Mines, Golden, Colorado 80401, United States
National Renewable Energy Laboratory, Golden, Colorado 80401, United States
Department of Physics, Colorado School of Mines, Golden, Colorado 80401, United States

Not Available

View Journal Article

Cite

Export

Save

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE; USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 2482615

Report Number(s):: NREL/JA--5900-89414; acsami.4c18928

Journal Information:: ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces; ISSN 1944-8244

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

References (46)

Evolution of silicon bulk lifetime during III-V-on-Si multijunction solar cell epitaxial growth: Evolution of silicon bulk lifetime García-Tabarés, Elisa; Carlin, John A.; Grassman, Tyler J. Progress in Photovoltaics: Research and Applications, Vol. 24, Issue 5 https://doi.org/10.1002/pip.2703	journal	November 2015
Techno-economic analysis of three different substrate removal and reuse strategies for III-V solar cells: Techno-economic analysis for III-V solar cells Ward, J. Scott; Remo, Timothy; Horowitz, Kelsey Progress in Photovoltaics: Research and Applications, Vol. 24, Issue 9 https://doi.org/10.1002/pip.2776	journal	May 2016
Two‐terminal III–V//Si triple‐junction solar cell with power conversion efficiency of 35.9 % at AM1.5g Schygulla, Patrick; Müller, Ralph; Lackner, David Progress in Photovoltaics: Research and Applications, Vol. 30, Issue 8 https://doi.org/10.1002/pip.3503	journal	November 2021
GaAs solar cells grown on Si substrates for space use Yamaguchi, Masafumi; Ohmachi, Yoshiro; Oh'hara, Takahiko Progress in Photovoltaics: Research and Applications, Vol. 9, Issue 3 https://doi.org/10.1002/pip.366	journal	May 2001
Wafer‐bonded two‐terminal III‐V//Si triple‐junction solar cell with power conversion efficiency of 36.1% at AM1.5g Schygulla, Patrick; Müller, Ralph; Höhn, Oliver Progress in Photovoltaics: Research and Applications https://doi.org/10.1002/pip.3769	journal	January 2024
A Pathway to Thin GaAs Virtual Substrate on On‐Axis Si (001) with Ultralow Threading Dislocation Density Shang, Chen; Selvidge, Jennifer; Hughes, Eamonn physica status solidi (a) https://doi.org/10.1002/pssa.202000402	journal	August 2020
Epitaxial GaInP/GaAs/Si Triple‐Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic Al _x Ga _{1− x} As _y P _{1− y} Step‐Graded Buffer Structures Feifel, Markus; Lackner, David; Schön, Jonas Solar RRL https://doi.org/10.1002/solr.202000763	journal	March 2021
Impacts of Dislocations and Residual Thermal Tension on Monolithically Integrated InGaP/GaAs/Si Triple‐Junction Solar Cells Kim, Yeonhwa; Shin, Hyun‐Beom; Ju, Eunkyo Solar RRL, Vol. 8, Issue 18 https://doi.org/10.1002/solr.202400318	journal	August 2024
3-D modeling of perimeter recombination in GaAs diodes and its influence on concentrator solar cells Ochoa, M.; Algora, C.; Espinet-González, P. Solar Energy Materials and Solar Cells, Vol. 120 https://doi.org/10.1016/j.solmat.2013.08.009	journal	January 2014
Voltage losses due to the perimeter and dark area in micro-concentrator solar cells Wiesenfarth, M.; Steiner, M.; Helmers, H. Solar Energy Materials and Solar Cells, Vol. 219 https://doi.org/10.1016/j.solmat.2020.110791	journal	January 2021
23.4% monolithic epitaxial GaAsP/Si tandem solar cells and quantification of losses from threading dislocations Lepkowski, Daniel L.; Grassman, Tyler J.; Boyer, Jacob T. Solar Energy Materials and Solar Cells, Vol. 230 https://doi.org/10.1016/j.solmat.2021.111299	journal	September 2021
Current-Matched III–V/Si Epitaxial Tandem Solar Cells with 25.0% Efficiency Fan, Shizhao; Yu, Zhengshan J.; Hool, Ryan D. Cell Reports Physical Science, Vol. 1, Issue 9 https://doi.org/10.1016/j.xcrp.2020.100208	journal	September 2020
High-Temperature Nucleation of GaP on V-Grooved Si Saenz, Theresa E.; McMahon, William E.; Norman, Andrew G. Crystal Growth & Design, Vol. 20, Issue 10 https://doi.org/10.1021/acs.cgd.0c00875	journal	September 2020
Reduced Dislocation Introduction in III–V/Si Heterostructures with Glide-Enhancing Compressively Strained Superlattices Boyer, Jacob T.; Blumer, Ari N.; Blumer, Zak H. Crystal Growth & Design, Vol. 20, Issue 10 https://doi.org/10.1021/acs.cgd.0c00992	journal	September 2020
Coalescence of GaP on V-Groove Si Substrates Saenz, Theresa E.; Mangum, John S.; Schneble, Olivia D. ACS Applied Electronic Materials, Vol. 5, Issue 2 https://doi.org/10.1021/acsaelm.2c01688	journal	February 2023
Perspectives on Advances in Quantum Dot Lasers and Integration with Si Photonic Integrated Circuits Shang, Chen; Wan, Yating; Selvidge, Jennifer ACS Photonics, Vol. 8, Issue 9 https://doi.org/10.1021/acsphotonics.1c00707	journal	August 2021
Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions Essig, Stephanie; Allebé, Christophe; Remo, Timothy Nature Energy, Vol. 2, Issue 9 https://doi.org/10.1038/nenergy.2017.144	journal	August 2017
Mechanical Properties and Dislocation Dynamics in III-V Compounds Yonenaga, I. Journal de Physique III, Vol. 7, Issue 7 https://doi.org/10.1051/jp3:1997198	journal	July 1997
Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing Currie, M. T.; Samavedam, S. B.; Langdo, T. A. Applied Physics Letters, Vol. 72, Issue 14 https://doi.org/10.1063/1.121162	journal	April 1998
High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates Sieg, R. M.; Carlin, J. A.; Boeckl, J. J. Applied Physics Letters, Vol. 73, Issue 21 https://doi.org/10.1063/1.122689	journal	November 1998
Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates Yang, V. K.; Groenert, M.; Leitz, C. W. Journal of Applied Physics, Vol. 93, Issue 7 https://doi.org/10.1063/1.1558963	journal	April 2003
Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates Andre, C. L.; Boeckl, J. J.; Wilt, D. M. Applied Physics Letters, Vol. 84, Issue 18 https://doi.org/10.1063/1.1736318	journal	May 2004
Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation Quitoriano, Nathaniel J.; Fitzgerald, Eugene A. Journal of Applied Physics, Vol. 102, Issue 3 https://doi.org/10.1063/1.2764204	journal	August 2007
Quantitative measurements of recombination enhanced dislocation glide in gallium arsenide Maeda, Koji; Sato, Miwa; Kubo, Akihisa Journal of Applied Physics, Vol. 54, Issue 1 https://doi.org/10.1063/1.331725	journal	January 1983
Characterization of epitaxially grown GaAs on Si substrates with III‐V compounds intermediate layers by metalorganic chemical vapor deposition Soga, Tetsuo; Hattori, Shuzo; Sakai, Shiro Journal of Applied Physics, Vol. 57, Issue 10 https://doi.org/10.1063/1.335363	journal	May 1985
Efficiency calculations of thin‐film GaAs solar cells on Si substrates Yamaguchi, Masafumi; Amano, Chikara Journal of Applied Physics, Vol. 58, Issue 9 https://doi.org/10.1063/1.335737	journal	November 1985
Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging Carnevale, Santino D.; Deitz, Julia I.; Carlin, John A. Applied Physics Letters, Vol. 104, Issue 23 https://doi.org/10.1063/1.4883371	journal	June 2014
Design rules for dislocation filters Ward, T.; Sánchez, A. M.; Tang, M. Journal of Applied Physics, Vol. 116, Issue 6 https://doi.org/10.1063/1.4892162	journal	August 2014
Thermal stress distribution in a laser array structure selectively grown on V-groove-patterned silicon Yin, Haiying; Wang, Jun; Yang, Zeyuan AIP Advances, Vol. 8, Issue 8 https://doi.org/10.1063/1.5042797	journal	August 2018
MOCVD grown low dislocation density GaAs-on-V-groove patterned (001) Si for 1.3 μ m quantum dot laser applications Shi, Bei; Wang, Lei; Taylor, Aidan A. Applied Physics Letters, Vol. 114, Issue 17 https://doi.org/10.1063/1.5090437	journal	April 2019
Relaxed GaP on Si with low threading dislocation density Hool, Ryan D.; Chai, Yuji; Sun, Yukun Applied Physics Letters, Vol. 116, Issue 4 https://doi.org/10.1063/1.5141122	journal	January 2020
Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates Lee, J. W.; Shichijo, H.; Tsai, H. L. Applied Physics Letters, Vol. 50, Issue 1 https://doi.org/10.1063/1.98117	journal	January 1987
Defect filtering for thermal expansion induced dislocations in III–V lasers on silicon Selvidge, Jennifer; Norman, Justin; Hughes, Eamonn T. Applied Physics Letters, Vol. 117, Issue 12 https://doi.org/10.1063/5.0023378	journal	September 2020
Crack propagation in low dislocation density quantum dot lasers epitaxially grown on Si Shang, Chen; Begley, Matthew R.; Gianola, Daniel S. APL Materials, Vol. 10, Issue 1 https://doi.org/10.1063/5.0077199	journal	January 2022
Kinetically limited misfit dislocations formed during post-growth cooling in III–V lasers on silicon Mukherjee, Kunal; Selvidge, Jennifer; Hughes, Eamonn Journal of Physics D: Applied Physics, Vol. 54, Issue 49 https://doi.org/10.1088/1361-6463/ac24c9	journal	September 2021
Direct observation of recombination-enhanced dislocation glide in heteroepitaxial GaAs on silicon Callahan, Patrick G.; Haidet, Brian B.; Jung, Daehwan Physical Review Materials, Vol. 2, Issue 8 https://doi.org/10.1103/PhysRevMaterials.2.081601	journal	August 2018
Supercharging Silicon Solar Cell Performance by Means of Multijunction Concept Almansouri, Ibraheem; Ho-Baillie, Anita; Bremner, Stephen P. IEEE Journal of Photovoltaics, Vol. 5, Issue 3 https://doi.org/10.1109/JPHOTOV.2015.2395140	journal	May 2015
Gallium Phosphide Window Layer for Silicon Solar Cells Feifel, Markus; Rachow, Thomas; Benick, Jan IEEE Journal of Photovoltaics, Vol. 6, Issue 1 https://doi.org/10.1109/JPHOTOV.2015.2478062	journal	January 2016
GaAs Solar Cells on Nanopatterned Si Substrates Vaisman, Michelle; Jain, Nikhil; Li, Qiang IEEE Journal of Photovoltaics, Vol. 8, Issue 6 https://doi.org/10.1109/JPHOTOV.2018.2871423	journal	November 2018
Dual-Wavelength Time-Resolved Photoluminescence Study of CdSe _x Te _1-x Surface Passivation via Mg _y Zn _1-y O and Al ₂ O ₃ McGott, Deborah; Good, Brian; Fluegel, Brian IEEE Journal of Photovoltaics, Vol. 12, Issue 1 https://doi.org/10.1109/JPHOTOV.2021.3124169	journal	January 2022
Enabling low-cost III-V/Si integration through nucleation of GaP on v-grooved Si substrates Warren, Emily L.; Makoutz, Emily A.; Saenz, Theresa 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) https://doi.org/10.1109/PVSC.2018.8547324	conference	June 2018
Investigations of High-Performance GaAs Solar Cells Grown on Ge–Si$_1-xhbox Ge_ x$–Si Substrates Andre, C. L.; Carlin, J. A.; Boeckl, J. J. IEEE Transactions on Electron Devices, Vol. 52, Issue 6 https://doi.org/10.1109/TED.2005.848117	journal	June 2005
Minority Carrier Lifetime of GaAs on Silicon Ahrenkiel, R. K.; Al‐Jassim, M. M.; Keyes, B. Journal of The Electrochemical Society, Vol. 137, Issue 3 https://doi.org/10.1149/1.2086595	journal	March 1990
Metamorphic epitaxy for multijunction solar cells France, Ryan M.; Dimroth, Frank; Grassman, Tyler J. MRS Bulletin, Vol. 41, Issue 3 https://doi.org/10.1557/mrs.2016.25	journal	March 2016
A Techno-Economic Analysis and Cost Reduction Roadmap for III-V Solar Cells Horowitz, Kelsey A.; Remo, Timothy W.; Smith, Brittany https://doi.org/10.2172/1484349	report	November 2018
GaAs/Si Tandem Solar Cells with an Optically Transparent InAlAs/GaAs Strained Layer Superlattices Dislocation Filter Layer Kim, Yeonhwa; Madarang, May Angelu; Ju, Eunkyo Energies, Vol. 16, Issue 3 https://doi.org/10.3390/en16031158	journal	January 2023

Similar Records

Towards a III-V Solar Cell with a Metamorphic Graded Buffer Directly Grown on V-Groove Si Substrates

Conference · 2021 · OSTI ID:1821900

Saenz, Theresa E.; Mangum, John S.; Schneble, Olivia D.; +5 more

Coalescence of GaP on V-Groove Si Substrates

Journal Article · 2023 · ACS Applied Electronic Materials · OSTI ID:1926775

Saenz, Theresa E.; Mangum, John S.; Schneble, Olivia D.; +5 more

GaAs solar cells grown on intentionally contaminated GaAs substrates

Journal Article · 2020 · Journal of Crystal Growth · OSTI ID:1659999

Simon, John; Frank-Rotsch, Christiane; Stolze, Karoline; +3 more

Related Subjects

14 SOLAR ENERGY
III-V
Si
dislocations
epitaxy
nanopatterning
semiconductors
solar cells

Title: GaAs Solar Cells Grown Directly on V-Groove Si Substrates

Citation Formats

References (46)

Similar Records

Related Subjects