The Critical Influence of Spin‐Dry Technique on the Surface Passivation Quality of Crystalline Silicon Solar Cell Structures
- Rutgers University, now with Texas A&,M University 400 Bizzell Street College Station TX 77843 USA
- Rutgers University, now with Canadian Solar Inc. 545 Speedvale Avenue West Guelph ON N1K 1E6 Canada
- Rutgers University: Rutgers The State University of New Jersey 500 Bartholomew Road Piscataway NJ 08840 USA
This study examines the effects of spin‐dry (SD) and N 2 blow‐dry (ND) techniques on the quality and surface passivation performance of silicon oxide grown in ozone‐dissolved deionized water. The SD method achieves greater oxide thickness uniformity, averaging 1.39 nm ± 4.17% across 49 points, compared to 1.68 nm ± 21.67% for the ND wafers. However, persistently poor passivation of ozonated oxide‐grown wafers following the SD process is exhibited, with carrier lifetime, τ eff < 0.3 ms and saturation current density, J 0 (per side) ranging from 26 to 45 fA cm 2 . These findings are analyzed in the context of the fundamental phenomena involved in the drying processes of both techniques. Following this, an optimized spin‐drying process is developed, resulting in improved τ eff and J 0 values of 1.4 ms and 5.6 fA cm −2 , respectively. Scanning electron microscopy further confirms that the oxide films dried with the enhanced SD technique are free of pinholes.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 2482114
- Journal Information:
- Physica Status Solidi. Rapid Research Letters, Journal Name: Physica Status Solidi. Rapid Research Letters Journal Issue: 4 Vol. 19; ISSN 1862-6254
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- Germany
- Language:
- English
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