Evolution of Dissipative Regimes in Atomically Thin Bi2Sr2CaCu2O8 + x Superconductor
- Leibniz Inst. for Solid State and Materials Research (IFW), Dresden (Germany); Technische Universität Dresden (Germany)
- Univ. of Genova (Italy); National Research Council (CNR), Genova (Italy). Inst. for Superconductors, Innovative Materials and Devices (CNR-SPIN)
- Leibniz Inst. for Solid State and Materials Research (IFW), Dresden (Germany); Max Planck Institute for Chemical Physics of Solids, Dresden (Germany)
- Leibniz Inst. for Solid State and Materials Research (IFW), Dresden (Germany); Swabian Instruments GmbH, Stuttgart (Germany)
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Terra Quantum AG, St. Gallen (Switzerland)
- National Research Council (CNR), Genova (Italy). Inst. for Superconductors, Innovative Materials and Devices (CNR-SPIN)
- Leibniz Inst. for Solid State and Materials Research (IFW), Dresden (Germany); Univ. of Naples Federico II (Italy)
Thermoelectric transport is widely used to study Abrikosov vortex dynamics in unconventional superconductors. However, only a few thermoelectric studies have been conducted near the dimensional crossover that occurs when the vortex-vortex interaction length scale becomes comparable to the sample size. Here, the effects of finite size on the dissipation mechanisms of the Nernst effect in the optimally doped Bi2Sr2CaCu2O8 + x high-temperature superconductor are reported, down to the atomic length limit. To access this regime, a new generation of thermoelectric chips based on silicon nitride microprinted circuit boards is developed. These chips ensure optimized signals while preventing sample deterioration. The results demonstrate that lateral confinement at the nanoscale can effectively reduce vortex dissipation. Investigating vortex dissipation at the micro- and nano-scale is essential for creating stable, miniaturized superconducting circuits.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Biological and Environmental Research (BER); German Research Foundation (DFG); European Union (EU); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0012704
- OSTI ID:
- 2481336
- Report Number(s):
- BNL--226413-2024-JAAM
- Journal Information:
- Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 4 Vol. 11; ISSN 2199-160X
- Publisher:
- WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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