Single Crystalline GeSe Van Der Waals Ribbons With Uniform Layer Stacking, High Carrier Mobility, and Adjustable Edge Morphology
[1];
[2];
[5]
- Department of Mechanical and Materials Engineering University of Nebraska‐Lincoln Lincoln NE 68588 USA, Nebraska Center for Materials and Nanoscience University of Nebraska‐Lincoln Lincoln NE 68588 USA
- Center for Functional Nanomaterials Brookhaven National Laboratory Upton NY 11973 USA
- Condensed Matter Physics and Materials Science Department Brookhaven National Laboratory Upton NY 11973 USA
- Center for Functional Nanomaterials Brookhaven National Laboratory Upton NY 11973 USA, Department of Electrical and Computer Engineering University of Nebraska‐Lincoln Lincoln NE 68588 USA
- Department of Electrical and Computer Engineering University of Nebraska‐Lincoln Lincoln NE 68588 USA
Abstract Performance of the group IV monochalcogenide GeSe in solar cells, electronic, and optoelectronic devices is expected to improve when high‐quality single crystalline material is used rather than polycrystalline films. Crystalline flakes represent an attractive alternative to bulk single crystals as their synthesis may be developed to be scalable, faster, and with higher overall yield. However, large – and especially large and thin – single crystal flakes are notoriously hard to synthesize. Here it is demonstrated that vapor‐liquid‐solid growth combined with direct lateral vapor‐solid incorporation produces high‐quality single crystalline GeSe ribbons with tens of micrometers size and controllable thickness. Electron microscopy shows that the ribbons exhibit perfect equilibrium (AB) van der Waals stacking order without extended defects across the entire thickness, in contrast to the conventional case of substrate‐supported flakes where material is added via layer‐by‐layer nucleation and growth on the basal plane. Electrical measurements show anisotropic transport and a high Hall mobility of 85 cm 2 V −1 s −1 , on par with the best single crystals to date. Growth from mixed GeSe and SnSe vapors, finally, yields ribbons with unchanged structure and composition but with jagged edges, promising for applications that rely on ample chemically active edge sites, such as catalysis or photocatalysis.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- National Science Foundation (NSF); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)
- Grant/Contract Number:
- SC0012704
- OSTI ID:
- 2480988
- Report Number(s):
- BNL-226242-2024-JAAM; 2406129
- Journal Information:
- Small, Journal Name: Small Journal Issue: 50 Vol. 20; ISSN 1613-6810
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- Germany
- Language:
- English
Similar Records
Lateral Integration of SnS and GeSe van der Waals Semiconductors: Interface Formation, Electronic Structure, and Nanoscale Optoelectronics
Stacking Fault Induced Symmetry Breaking in van der Waals Nanowires