The role of the dopant in the electronic structure of erbium-doped TiO2 for quantum emitters

Martins, J. B.; Grant, G.; Haskel, D.; Sterbinsky, G. E.; Masiulionis, I.; Sautter, K. E.; Karapetrova, E.; Guha, S.; Freeland, J. W.

doi:10.1063/5.0241141

Title: The role of the dopant in the electronic structure of erbium-doped TiO2 for quantum emitters

Journal Article · 05 December 2024 · APL Materials

DOI: https://doi.org/10.1063/5.0241141 · OSTI ID:2480368

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; Karapetrova, E.;

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Erbium-doped TiO2 materials are promising candidates for advancing quantum technologies, necessitating a thorough understanding of their electronic and crystal structures to tailor their properties and enhance coherence times. This study explored epitaxial erbium-doped rutile TiO2 films deposited on r-sapphire substrates using molecular beam epitaxy. Photoluminescence excitation spectroscopy demonstrated decreasing photoluminescence lifetimes with erbium doping, indicating limited optical coherence times. Lattice distortions associated with Er3+ were probed by x-ray absorption spectroscopy, indicating that erbium primarily occupies Ti4+ sites and influences oxygen vacancies. Significant lattice distortions in the higher-order shells and apparent full coordination around erbium suggest that additional defects are likely prevalent in these regions. These findings indicate that defects contribute to limited coherence times by introducing alternative decay pathways, leading to shorter photoluminescence lifetimes.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 2480368

Journal Information:: APL Materials, Journal Name: APL Materials Journal Issue: 12 Vol. 12; ISSN 2166-532X

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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