Underlying mechanism of structural transformation between GaSb and GaAs response to intense electronic excitation

Han, Xinqing; Pan, Shangfa; Zhu, Zhenghui; Crespillo, Miguel L.; Zarkadoula, Eva; Liu, Yong; Liu, Peng

doi:10.1016/j.matdes.2024.113505

Title: Underlying mechanism of structural transformation between GaSb and GaAs response to intense electronic excitation

Journal Article · 27 November 2024 · Materials & Design

DOI: https://doi.org/10.1016/j.matdes.2024.113505 · OSTI ID:2480032

Han, Xinqing ^[1]; Pan, Shangfa ^[1]; Zhu, Zhenghui ^[1];

^[2];

^[3]; Liu, Yong ^[4];

^[1]

Shandong University, Qingdao, Shandong (China)
University of Tennessee, Knoxville, TN (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Shandong University, Jinan (China)

Ion irradiation of semiconductors has emerged as a promising approach for fabricating self-organized nanosystems with high atomic precision, despite often being accompanied by undesirable phenomena. Exploring the mechanisms underlying structural transformations is crucial for assessing nanostructure array types under complex irradiation environments. By quantitatively calculating the thermodynamically driven processes and analyzing the impact of intrinsic structural parameters, distinct structural transformations in response to intense electronic excitation are systematically investigated in gallium antimonide (GaSb) and gallium arsenide (GaAs) systems. In high-energy regimes, the nanofibers layer of GaSb exhibits intriguing structural discrepancy, characterized by partial nanofibers with coherent boundaries, interspersed nanopores accompanied by antisite defects and Ga precipitates, distinguishing to a series of discontinuous latent tracks that emerged within cylindrical trajectories in GaAs. Furthermore, significant diffusion behaviors of the nanohillocks are discovered in GaAs, with higher average roughness than GaSb, driven by the gradient stress distribution influenced by the free-surface effects. The deposition energy for melting phase formation, Gibbs free energy, and Ga diffusion coefficients contribute to the distinctive structural features, evidencing relatively stable morphological configurations and higher irradiation resistance in GaAs. Consequently, special optoelectronic properties associated with structural discrepancies facilitate the design and optimization of material functionalities by irradiation technologies.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); National Key Research and Development Program of China; National Natural Science Foundation of China; China Postdoctoral Science Foundation; Postdoctoral Fellowship Program of CPSF

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 2480032

Journal Information:: Materials & Design, Journal Name: Materials & Design Vol. 248; ISSN 0264-1275

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Underlying mechanism of structural transformation between GaSb and GaAs response to intense electronic excitation

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