High Mobility, High Carrier Density SnSe 2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching
[4]
- Advanced Research Institute of Multidisciplinary Science Beijing Institute of Technology Beijing 100081 China, Center for Functional Nanomaterials Brookhaven National Laboratory Upton New York NY 11973 USA
- Department of Mechanical and Materials Engineering University of Nebraska‐Lincoln Lincoln NE 68588 USA
- School of Energy Resources and Department of Chemistry University of Wyoming Laramie WY 82071 USA
- Department of Electrical and Computer Engineering University of Nebraska‐Lincoln Lincoln NE 68588 USA
Abstract 2D and layered semiconductors are considered as promising electronic materials, particularly for applications that require high carrier mobility and efficient field‐effect switching combined with mechanical flexibility. To date, however, the highest mobility has been realized primarily at low carrier concentration. Here, it is shown that few‐layer/multilayer SnSe 2 gated by a solution top gate combines very high room‐temperature electron mobility (up to 800 cm 2 V −1 s −1 ), along with large on‐off current ratios (>10 5 ) and a subthreshold swing below the thermodynamic limit (50 mV per decade) in field‐effect devices, at exceptionally large sheet carrier concentrations of ≈10 13 cm −2 . Observed mobility enhancements upon partial depletion of the channel point to near‐surface defects or impurities as the mobility‐limiting scattering centers. Under illumination, the resulting gap states give rise to gate‐controlled switching between positive and negative photoconductance. The results qualify SnSe 2 as a promising layered semiconductor for flexible and wearable electronics, as well as for the realization of advanced approaches to photodetection.
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- NONE; SC0023437
- OSTI ID:
- 2477865
- Journal Information:
- Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 7 Vol. 11; ISSN 2199-160X
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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