Modeling a Strain and Piezo Potentials in an InAs/GaAs Quantum Dot

Journal Article · 12 November 2024 · Processes

DOI: https://doi.org/10.3390/pr12112524 · OSTI ID:2477133

Filikhin, Igor  ^[1]; Vlahovic, Branislav ^[1]; Zatezalo, Tanja ^[1]; Karoui, Abdennaceur ^[2]; Oxley, Jimmie ^[3]

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1. North Carolina Central University, Durham, NC (United States)
2. Elizabeth City State University, NC (United States)
3. University of Rhode Island, Kingston, RI (United States)

We investigated the single-electron spectrum of an InAs/GaAs quantum dot (QD) using an effective potential model developed in previous studies. Our objective was to explore the limits of applicability of this model. We conducted numerical simulations, introducing a piezoelectric potential as a perturbation to the effective potential. The profile of this additional potential was derived from theoretical numerical studies presented in the literature. We analyzed the impact of variations in this profile within the framework of the perturbation theory. Our findings indicate that within a variation range of 25%, the effective potential model remains applicable.

• Research Organization: Elizabeth City State University, NC (United States); North Carolina Central University, Durham, NC (United States)
• Sponsoring Organization: National Science Foundation (NSF); US National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Nuclear Energy (NE), Nuclear Infrastructure Programs. Office of Nuclear Materials Production, Management, & Protection
• Grant/Contract Number: NA0004112; SC0014664
• OSTI ID: 2477133
• Journal Information: Processes, Journal Name: Processes Journal Issue: 11 Vol. 12; ISSN 2227-9717
• Publisher: MDPICopyright Statement
• Country of Publication: United States
• Language: English