Growth Phenomena and Bandgap Shift in Melt‐Grown β‐(In x Ga 1− x ) 2 O 3 Alloys
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- Institute of Materials Research Washington State University Pullman WA 99164‐2711 USA, School of Mechanical and Materials Engineering Washington State University Pullman WA 99164 USA
- School of Mechanical and Materials Engineering Washington State University Pullman WA 99164 USA, Department of Physics and Astronomy Washington State University Pullman WA 99164‐2814 USA
- Institute of Materials Research Washington State University Pullman WA 99164‐2711 USA
- Department of Materials Science and Engineering The Pennsylvania State University University Park Pennsylvania 16802 USA
- Lawrence Livermore National Laboratory Livermore CA 94551‐0808 USA
- Institute of Materials Research Washington State University Pullman WA 99164‐2711 USA, School of Mechanical and Materials Engineering Washington State University Pullman WA 99164 USA, Department of Physics and Astronomy Washington State University Pullman WA 99164‐2814 USA
β‐Ga 2 O 3 is an emerging ultra‐wide bandgap semiconductor with great promise for power electronics and optoelectronics. Alloys in the In 2 O 3 ‐Ga 2 O 3 system are interesting for optoelectronic applications, particularly where bandgap tuning is desirable. Herein, β‐(In x Ga 1– x ) 2 O 3 alloys with target compositions x = 0.025 or 0.10 are grown from the melt using the Czochralski and vertical gradient freeze techniques. Growth with 10 mol% In yields only small, needle‐like crystals, while 2.5 mol% In allows growth of centimeter‐sized single crystals. A substantial degree of indium segregation is unveiled by spatial measurements of lattice parameters and the bandgap. The bandgap decreases by a maximum of 0.28 eV in the case of the highest In content crystals. Z‐contrast transmission electron microscopy confirms a solely octahedral coordination of In in the β‐Ga 2 O 3 lattice. With indium concentrations higher than 2.5 mol%, samples contain micron‐scale voids that impart a dark coloration. All measured crystals are electrically conductive, with carrier concentrations varying 10 16 –10 17 cm −3 depending upon the location of the sample in the growth. Lastly, a unique luminescence with unknown origin centered around 2.0 eV is revealed by photoluminescence spectroscopy.
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- FG02-07ER46386; AC52-07NA27344
- OSTI ID:
- 2476884
- Journal Information:
- Physica Status Solidi B. Basic Solid State Physics, Journal Name: Physica Status Solidi B. Basic Solid State Physics; ISSN 0370-1972
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- Germany
- Language:
- English
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