Topological material in the III–V family: Heteroepitaxial InBi on InAs

Nicolaï, Laurent; Minár, Ján; Richter, Maria Christine; Heckmann, Olivier; Mariot, Jean-Michel; Djukic, Uros; Adell, Johan; Leandersson, Mats; Sadowski, Janusz; Braun, Jürgen; Ebert, Hubert; Denlinger, Jonathan D.; Vobornik, Ivana; Fujii, Jun; Šutta, Pavol; Bell, Gavin R.; Gmitra, Martin; Hricovini, Karol

doi:10.1103/PhysRevResearch.6.043116

Title: Topological material in the III–V family: Heteroepitaxial InBi on InAs

Journal Article · 07 November 2024 · Physical Review Research

DOI: https://doi.org/10.1103/PhysRevResearch.6.043116 · OSTI ID:2476579

;

; Heckmann, Olivier; Mariot, Jean-Michel;

;

; Leandersson, Mats;

; Braun, Jürgen;

;

; Šutta, Pavol;

;

$InBi (0 0 1)$ is formed epitaxially on $InAs (1 1 1)$ -A by depositing Bi onto an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the $\bar{M}$ high symmetry point. This demonstrates a heteroepitaxial system entirely in the III–V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III–V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of $InBi (0 0 1)$ terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the one-step model of photoemission clarify the relationship between the $InBi (0 0 1)$ surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi–Bi hopping terms, and no Bi–In interaction, gives a deeper insight into the spin texture. Published by the American Physical Society 2024

View Journal Article

Cite

Export

Save

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 2476579

Journal Information:: Physical Review Research, Journal Name: Physical Review Research Journal Issue: 4 Vol. 6; ISSN PPRHAI; ISSN 2643-1564

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

References (49)

The Material Efforts for Quantized Hall Devices Based on Topological Insulators Fei, Fucong; Zhang, Shuai; Zhang, Minhao Advanced Materials https://doi.org/10.1002/adma.201904593	journal	December 2019
Characteristic Growth Features and Etching of InBi Single Crystals Pandya, G. R.; Vyas, S. M. Crystal Research and Technology, Vol. 28, Issue 2 https://doi.org/10.1002/crat.2170280207	journal	January 1993
Spin--Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems Winkler, Roland; Höhler, Gerhard; Kühn, Johann H. Springer Tracts in Modern Physics, Vol. 191 https://doi.org/10.1007/b13586	book	January 2003
Growth Parameters for Thin Film InBi Grown by Molecular Beam Epitaxy Keen, B.; Makin, R.; Stampe, P. A. Journal of Electronic Materials, Vol. 43, Issue 4 https://doi.org/10.1007/s11664-014-3006-8	journal	January 2014
Characterization of InBi single crystal by etching and indentation Roy, U.; Glassco, D. Journal of Crystal Growth, Vol. 16, Issue 3 https://doi.org/10.1016/0022-0248(72)90207-2	journal	December 1972
The elastic behaviour of InBi single crystals Akgöz, Y. C.; Farley, J. M.; Saunders, G. A. Journal of Physics and Chemistry of Solids, Vol. 34, Issue 2 https://doi.org/10.1016/0022-3697(73)90071-1	journal	January 1973
Plasmon excitations and the effects of surface preparation in n-type InAs(001) studied by electron energy loss spectroscopy Bell, G. R.; McConville, C. F.; Jones, T. S. Applied Surface Science, Vol. 104-105 https://doi.org/10.1016/S0169-4332(96)00115-8	journal	September 1996
Transport properties of In2Bi and InBi single crystals Nishimura, K. Physica B: Condensed Matter, Vol. 329-333 https://doi.org/10.1016/S0921-4526(02)02272-X	journal	May 2003
Correlation, temperature and disorder: Recent developments in the one-step description of angle-resolved photoemission Braun, Jürgen; Minár, Ján; Ebert, Hubert Physics Reports, Vol. 740 https://doi.org/10.1016/j.physrep.2018.02.007	journal	April 2018
The surfaces of bismuth: Structural and electronic properties Hofmann, Ph. Progress in Surface Science, Vol. 81, Issue 5 https://doi.org/10.1016/j.progsurf.2006.03.001	journal	January 2006
Robust Large Gap Two-Dimensional Topological Insulators in Hydrogenated III–V Buckled Honeycombs Crisostomo, Christian P.; Yao, Liang-Zi; Huang, Zhi-Quan Nano Letters, Vol. 15, Issue 10 https://doi.org/10.1021/acs.nanolett.5b02293	journal	September 2015
Mitrofanovite Pt ₃ Te ₄ : A Topological Metal with Termination-Dependent Surface Band Structure and Strong Spin Polarization Fujii, Jun; Ghosh, Barun; Vobornik, Ivana ACS Nano, Vol. 15, Issue 9 https://doi.org/10.1021/acsnano.1c04766	journal	September 2021
Prediction of Large-Gap Two-Dimensional Topological Insulators Consisting of Bilayers of Group III Elements with Bi Chuang, Feng-Chuan; Yao, Liang-Zi; Huang, Zhi-Quan Nano Letters, Vol. 14, Issue 5 https://doi.org/10.1021/nl500206u	journal	April 2014
A topological Dirac insulator in a quantum spin Hall phase Hsieh, D.; Qian, D.; Wray, L. Nature, Vol. 452, Issue 7190, p. 970-974 https://doi.org/10.1038/nature06843	journal	April 2008
Catalogue of topological electronic materials Zhang, Tiantian; Jiang, Yi; Song, Zhida Nature, Vol. 566, Issue 7745 https://doi.org/10.1038/s41586-019-0944-6	journal	February 2019
A complete catalogue of high-quality topological materials Vergniory, M. G.; Elcoro, L.; Felser, Claudia Nature, Vol. 566, Issue 7745 https://doi.org/10.1038/s41586-019-0954-4	journal	February 2019
Topological electronics Gilbert, Matthew J. Communications Physics, Vol. 4, Issue 1 https://doi.org/10.1038/s42005-021-00569-5	journal	April 2021
Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate Yao, Liang-Zi; Crisostomo, Christian P.; Yeh, Chun-Chen Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep15463	journal	November 2015
Topological Crystalline Insulator in a New Bi Semiconducting Phase Munoz, F.; Vergniory, M. G.; Rauch, T. Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep21790	journal	February 2016
Robust Room-Temperature Quantum Spin Hall Effect in Methyl-functionalized InBi honeycomb film Li, Sheng-shi; Ji, Wei-xiao; Zhang, Chang-wen Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep23242	journal	March 2016
A Note on the Quantum‐Mechanical Perturbation Theory Löwdin, Per‐Olov The Journal of Chemical Physics, Vol. 19, Issue 11 https://doi.org/10.1063/1.1748067	journal	November 1951
WSXM : A software for scanning probe microscopy and a tool for nanotechnology Horcas, I.; Fernández, R.; Gómez-Rodríguez, J. M. Review of Scientific Instruments, Vol. 78, Issue 1 https://doi.org/10.1063/1.2432410	journal	January 2007
MERLIN — A meV Resolution Beamline at the ALS Reininger, Ruben; Bozek, John; Chuang, Yi-De SYNCHROTRON RADIATION INSTRUMENTATION: Ninth International Conference on Synchrotron Radiation Instrumentation, AIP Conference Proceedings https://doi.org/10.1063/1.2436110	conference	January 2007
Advanced photoelectric effect experiment beamline at Elettra: A surface science laboratory coupled with Synchrotron Radiation Panaccione, G.; Vobornik, I.; Fujii, J. Review of Scientific Instruments, Vol. 80, Issue 4 https://doi.org/10.1063/1.3119364	journal	April 2009
First-principles study of the ground state stability of III–V bismuth compounds Zaoui, A.; Madouri, D.; Ferhat, M. Philosophical Magazine Letters, Vol. 89, Issue 12 https://doi.org/10.1080/09500830903304125	journal	December 2009
Calculating condensed matter properties using the KKR-Green's function method—recent developments and applications Ebert, H.; Ködderitzsch, D.; Minár, J. Reports on Progress in Physics, Vol. 74, Issue 9 https://doi.org/10.1088/0034-4885/74/9/096501	journal	August 2011
Spin-orbit-induced gap modification in buckled honeycomb XBi and XBi₃(X = B, Al, Ga, and In) sheets Freitas, R. R. Q.; de Brito Mota, F.; Rivelino, R. Journal of Physics: Condensed Matter, Vol. 27, Issue 48 https://doi.org/10.1088/0953-8984/27/48/485306	journal	November 2015
Non-trivial surface-band dispersion on Bi(111) Ohtsubo, Yoshiyuki; Perfetti, Luca; Goerbig, Mark Oliver New Journal of Physics, Vol. 15, Issue 3 https://doi.org/10.1088/1367-2630/15/3/033041	journal	March 2013
Observation of nodal line in non-symmorphic topological semimetal InBi Ekahana, Sandy Adhitia; Wu, Shu-Chun; Jiang, Juan New Journal of Physics, Vol. 19, Issue 6 https://doi.org/10.1088/1367-2630/aa75a1	journal	June 2017
Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study Nicolaï, L.; Mariot, J-M; Djukic, U. New Journal of Physics, Vol. 21, Issue 12 https://doi.org/10.1088/1367-2630/ab5c14	journal	December 2019
Surface structure transitions on InAs and GaAs (001) surfaces Yamaguchi, Hiroshi; Horikoshi, Yoshiji Physical Review B, Vol. 51, Issue 15 https://doi.org/10.1103/PhysRevB.51.9836	journal	April 1995
Electronic structure of InAs(1¯ 1¯ 1¯)2×2 and InSb(1¯ 1¯ 1¯)2×2 studied by angle-resolved photoelectron spectroscopy Andersson, C. B. M.; Karlsson, U. O.; Håkansson, M. C. Physical Review B, Vol. 54, Issue 3 https://doi.org/10.1103/PhysRevB.54.1833	journal	July 1996
Electronic structure of a bismuth bilayer Ast, Christian R.; Höchst, Hartmut Physical Review B, Vol. 67, Issue 11 https://doi.org/10.1103/PhysRevB.67.113102	journal	March 2003
Structural and electronic properties of III-V bismuth compounds Ferhat, M.; Zaoui, A. Physical Review B, Vol. 73, Issue 11 https://doi.org/10.1103/PhysRevB.73.115107	journal	March 2006
Spin and orbital angular momentum structure of Cu(111) and Au(111) surface states Kim, Beomyoung; Kim, Choong H.; Kim, Panjin Physical Review B, Vol. 85, Issue 19 https://doi.org/10.1103/PhysRevB.85.195402	journal	May 2012
Photon energy dependence of circular dichroism in angle-resolved photoemission spectroscopy of Bi 2 Se 3 Dirac states Vidal, F.; Eddrief, M.; Rache Salles, B. Physical Review B, Vol. 88, Issue 24 https://doi.org/10.1103/PhysRevB.88.241410	journal	December 2013
Surface Band-Gap Narrowing in Quantized Electron Accumulation Layers King, P. D. C.; Veal, T. D.; McConville, C. F. Physical Review Letters, Vol. 104, Issue 25 https://doi.org/10.1103/PhysRevLett.104.256803	journal	June 2010
Giant Anisotropy of Spin-Orbit Splitting at the Bismuth Surface Ohtsubo, Y.; Mauchain, J.; Faure, J. Physical Review Letters, Vol. 109, Issue 22 https://doi.org/10.1103/PhysRevLett.109.226404	journal	November 2012
Reversal of the Circular Dichroism in Angle-Resolved Photoemission from Bi 2 Te 3 Scholz, M. R.; Sánchez-Barriga, J.; Braun, J. Physical Review Letters, Vol. 110, Issue 21 https://doi.org/10.1103/PhysRevLett.110.216801	journal	May 2013
Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in Ultrathin Bi 2 Te 3 Films Xu, C. -Z.; Liu, Y.; Yukawa, R. Physical Review Letters, Vol. 115, Issue 1 https://doi.org/10.1103/PhysRevLett.115.016801	journal	June 2015
Strong Spin-Orbit Splitting on Bi Surfaces Koroteev, Yu. M.; Bihlmayer, G.; Gayone, J. E. Physical Review Letters, Vol. 93, Issue 4 https://doi.org/10.1103/PhysRevLett.93.046403	journal	July 2004
Photoemission of Bi 2 Se 3 with Circularly Polarized Light: Probe of Spin Polarization or Means for Spin Manipulation? Sánchez-Barriga, J.; Varykhalov, A.; Braun, J. Physical Review X, Vol. 4, Issue 1 https://doi.org/10.1103/PhysRevX.4.011046	journal	March 2014
Colloquium: Topological insulators Hasan, M. Z.; Kane, C. L. Reviews of Modern Physics, Vol. 82, Issue 4, p. 3045-3067 https://doi.org/10.1103/RevModPhys.82.3045	journal	November 2010
Topological insulators and superconductors Qi, Xiao-Liang; Zhang, Shou-Cheng Reviews of Modern Physics, Vol. 83, Issue 4 https://doi.org/10.1103/RevModPhys.83.1057	journal	October 2011
Experimental perspective on three-dimensional topological semimetals Lv, B. Q.; Qian, T.; Ding, H. Reviews of Modern Physics, Vol. 93, Issue 2 https://doi.org/10.1103/RevModPhys.93.025002	journal	April 2021
A rapid method for analysing the breadths of diffraction and spectral lines using the Voigt function Langford, J. I. Journal of Applied Crystallography, Vol. 11, Issue 1 https://doi.org/10.1107/S0021889878012601	journal	February 1978
The structural crystallography of indium bismuthide Binnie, W. P. Acta Crystallographica, Vol. 9, Issue 8 https://doi.org/10.1107/S0365110X56001893	journal	August 1956
Heteroepitaxial Growth of InBi(001) Rehaag, Thomas J.; Bell, Gavin R. Molecules, Vol. 29, Issue 12 https://doi.org/10.3390/molecules29122825	journal	June 2024
Formation of Tetragonal InBi Clusters in InAsBi/InAs(100) Heterostructures Grown by Molecular Beam Epitaxy Dominguez, Lara; Reyes, Daniel F.; Bastiman, Faebian Applied Physics Express, Vol. 6, Issue 11 https://doi.org/10.7567/APEX.6.112601	journal	November 2013