Strain Programming of Oxygen Octahedral Symmetry in Perovskite Oxide Thin Films

Park, Yunkyu; Kang, Seoung‐Hun; Song, Jeongkeun; Hwang, Sang Woon; Lin, Shan; Ok, Jong Mok; Yang, Fazhi; Kim, Hwangsun; Lupini, Andrew R.; Yoon, Mina; Yoon, Sangmoon; Zhou, Hua; Lee, Ho Nyung

doi:10.1002/admi.202400697

Title: Strain Programming of Oxygen Octahedral Symmetry in Perovskite Oxide Thin Films

Journal Article · 05 November 2024 · Advanced Materials Interfaces

DOI: https://doi.org/10.1002/admi.202400697 · OSTI ID:2476431

^[1]; Kang, Seoung‐Hun ^[1]; Song, Jeongkeun ^[1]; Hwang, Sang Woon ^[2]; Lin, Shan ^[1]; Ok, Jong Mok ^[3]; Yang, Fazhi ^[1]; Kim, Hwangsun ^[4]; Lupini, Andrew R. ^[4]; Yoon, Mina ^[1]; Yoon, Sangmoon ^[2];

^[5];

^[1]

Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge TN 37831 USA
Department of Physics Gacheon University Seongnam 13120 Republic of Korea
Department of Physics Pusan National University Busan 46241 Republic of Korea
Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA
X‐ray Science Division Advanced Photon Source Argonne National Laboratory Lemont IL 60439 USA

Abstract The collective rotations of oxygen octahedra play an important role in determining the physical properties of functional perovskite oxides. The epitaxial strain can serve as an effective means to modify the oxygen octahedral symmetry (OOS), i.e., oxygen octahedral rotation or tilt (OOR/OOT). However, the strain‐OOS coupling that may alter the details of the OOS, thereby the physical properties, has not been fully understood. In this work, it is demonstrated that epitaxial strain can not only induce a structural phase transition but also precisely tune the degree of OOR. The correlated metal CaNbO ₃ , which is orthorhombic, is studied by growing as epitaxial thin films. By imposing epitaxial strain, it is found that the film undergoes a structural phase transition from orthorhombic to tetragonal upon fully straining (i.e., from a ⁺ b ⁻ b ⁻ to a ⁰ a ⁰ c ⁻ ). In unstrained films, the octahedral rotation along the c ‐axis is as large as 15.7° that can be tuned to 6.6° by strain. This finding offers a general approach to manipulating OOR/OOT via strain engineering in complex oxide heterostructures.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: NONE; AC02-06CH11357; AC02-05CH11231

OSTI ID:: 2476431

Journal Information:: Advanced Materials Interfaces, Journal Name: Advanced Materials Interfaces Journal Issue: 3 Vol. 12; ISSN 2196-7350

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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