As‐Doped Polycrystalline CdSeTe: Localized Defects, Carrier Mobility and Lifetimes, and Impact on High‐Efficiency Solar Cells

Ščajev, Patrik; Nardone, Marco; Reich, Carey; Farshchi, Rouin; McReynolds, Kevin; Krasikov, Dmitry; Kuciauskas, Darius

doi:10.1002/aenm.202403902

Title: As‐Doped Polycrystalline CdSeTe: Localized Defects, Carrier Mobility and Lifetimes, and Impact on High‐Efficiency Solar Cells

Journal Article · 25 October 2024 · Advanced Energy Materials

DOI: https://doi.org/10.1002/aenm.202403902 · OSTI ID:2475007

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Institute of Photonics and Nanotechnology Faculty of Physics Vilnius University Vilnius 10257 Lithuania
Department of Physics Bowling Green State University Bowling Green OH 43403 USA
California Technology Center First Solar Santa Clara CA 95050 USA
Advanced Research First Solar Perrysburg OH 43551 USA
Chemistry and Nanoscience Center National Renewable Energy Laboratory Golden CO 80401 USA

Abstract The efficiency potential for single‐junction photovoltaics (PV) is described by the detailed balance model, which requires the elimination of nonradiative recombination and perfect minority carrier collection. Improvements in GaAs, Si, and perovskite PV follow this model. It might be more complex for CdTe, a leading thin‐film PV technology. While lifetime, passivation, and doping goals for 25% efficient CdTe solar cells are largely reached, voltage is ≈20% below the detailed balance limit. Why is that? In Se‐alloyed CdSe _x Te _1‐x (Se is required for >20% efficiency) additional losses can occur due to electrostatic and bandgap fluctuations and due to electronic trap states. To understand mechanisms limiting CdSeTe solar cell performance and to suggest improvements, carrier dynamics, and transport in CdSe _x Te _1‐x with variation in Se composition and as doping is analyzed. It is shown that trapping, likely due to anion‐site defects and their complexes, is correlated with low charge carrier mobility of 0.1–0.6 cm ² (Vs) ⁻¹ . Even with 1000 ns charge carrier lifetimes, carrier diffusion length is less than the absorber thickness, reducing efficiency to ≈23%. Device simulations are used to analyze the performance of CdSe _x Te _1‐x solar cells; thermodynamic models are not sufficient for absorbers with electronic disorder and trapping.

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Sponsoring Organization:: USDOE

OSTI ID:: 2475007

Journal Information:: Advanced Energy Materials, Journal Name: Advanced Energy Materials Journal Issue: 10 Vol. 15; ISSN 1614-6832

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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