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Title: Determining the oxidation stability of SnSe under atmospheric exposure

Journal Article · · MRS communications

Abstract Understanding surface stability becomes critical as 2D materials like SnSe are developed for piezoelectric and optical applications. SnSe thin films deposited by molecular beam epitaxy showed no structural changes after a two-year exposure to atmosphere, as confirmed by X-ray diffraction and Raman spectroscopy. X-ray photoelectron spectroscopy and reflectivity show a stable 3.5 nm surface oxide layer, indicating a self-arresting oxidative process. Resistivity measurements show an electrical response dominated by SnSe post-exposure. This work shows that SnSe films can be used in ambient conditions with minimal risk of long-term degradation, which is critical for the development of piezoelectric or photovoltaic devices. Graphical Abstract

Sponsoring Organization:
USDOE
OSTI ID:
2473500
Journal Information:
MRS communications, Journal Name: MRS communications Journal Issue: 5 Vol. 14; ISSN 2159-6867
Publisher:
Cambridge University Press (CUP)Copyright Statement
Country of Publication:
United States
Language:
English

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