Low Resistance Contact to P-Type Monolayer WSe2

Xie, Jingxu; Zhang, Zuocheng; Zhang, Haodong; Nagarajan, Vikram; Zhao, Wenyu; Kim, Ha-Leem; Sanborn, Collin; Qi, Ruishi; Chen, Sudi; Kahn, Salman; Watanabe, Kenji; Taniguchi, Takashi; Zettl, Alex; Crommie, Michael F.; Analytis, James; Wang, Feng

doi:10.1021/acs.nanolett.3c04195

Title: Low Resistance Contact to P-Type Monolayer WSe₂

Journal Article · 06 May 2024 · Nano Letters

DOI: https://doi.org/10.1021/acs.nanolett.3c04195 · OSTI ID:2473043

^[1]; Zhang, Zuocheng ^[2]; Zhang, Haodong ^[2]; Nagarajan, Vikram ^[2];

^[2];

^[1]; Sanborn, Collin ^[2]; Qi, Ruishi ^[1]; Chen, Sudi ^[2]; Kahn, Salman ^[2];

^[3];

^[4]; Zettl, Alex ^[5];

^[5]; Analytis, James ^[5]; Wang, Feng ^[5]

University of California, Berkeley, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
University of California, Berkeley, CA (United States)
Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
University of California, Berkeley, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Kavli Energy NanoScience Institute, Berkeley, CA (United States)

Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, with their atomically thin thickness, hold great promise for future electronic devices. One challenge to achieving high-performance 2D semiconductor field effect transistors (FET) is the high contact resistance at the metal-semiconductor interface. Here, in this study, we develop a charge-transfer doping strategy with WSe₂/α-RuCl₃ heterostructures to achieve low-resistance ohmic contact for p-type monolayer WSe2 transistors. We show that hole doping as high as 3 × 10¹³ cm^-2 can be achieved in the WSe₂/α-RuCl₃ heterostructure due to its type-III band alignment, resulting in an ohmic contact with resistance of 4 kΩ μm. Based on that, we demonstrate p-type WSe₂ transistors with an on-current of 35 μA·μm^-1 and an I_ON/I_OFF ratio exceeding 10⁹ at room temperature.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: Japan Society for the Promotion of Science (JSPS); US Army Research Office (ARO); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 2473043

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 20 Vol. 24; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

References (42)

Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides Sotthewes, Kai; van Bremen, Rik; Dollekamp, Edwin The Journal of Physical Chemistry C, Vol. 123, Issue 9 https://doi.org/10.1021/acs.jpcc.8b10971	journal	February 2019
Charge-Transfer Plasmon Polaritons at Graphene/α-RuCl ₃ Interfaces Rizzo, Daniel J.; Jessen, Bjarke S.; Sun, Zhiyuan Nano Letters, Vol. 20, Issue 12 https://doi.org/10.1021/acs.nanolett.0c03466	journal	November 2020
Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor Wang, Yiping; Balgley, Jesse; Gerber, Eli Nano Letters, Vol. 20, Issue 12 https://doi.org/10.1021/acs.nanolett.0c03493	journal	November 2020
Nanometer-Scale Lateral p–n Junctions in Graphene/α-RuCl₃ Heterostructures Rizzo, Daniel J.; Shabani, Sara; Jessen, Bjarke S. Nano Letters, Vol. 22, Issue 5 https://doi.org/10.1021/acs.nanolett.1c04579	journal	February 2022
Quenched Excitons in WSe₂/α-RuCl₃ Heterostructures Revealed by Multimessenger Nanoscopy Sternbach, Aaron J.; Vitalone, Rocco A.; Shabani, Sara Nano Letters, Vol. 23, Issue 11 https://doi.org/10.1021/acs.nanolett.3c00974	journal	May 2023
Self-Limiting Oxides on WSe ₂ as Controlled Surface Acceptors and Low-Resistance Hole Contacts Yamamoto, Mahito; Nakaharai, Shu; Ueno, Keiji Nano Letters, Vol. 16, Issue 4 https://doi.org/10.1021/acs.nanolett.6b00390	journal	March 2016
Electrical Transport Signature of the Magnetic Fluctuation-Structure Relation in α-RuCl ₃ Nanoflakes Mashhadi, Soudabeh; Weber, Daniel; Schoop, Leslie M. Nano Letters, Vol. 18, Issue 5 https://doi.org/10.1021/acs.nanolett.8b00926	journal	April 2018
Electrode-Free Anodic Oxidation Nanolithography of Low-Dimensional Materials Li, Hongyuan; Ying, Zhe; Lyu, Bosai Nano Letters, Vol. 18, Issue 12 https://doi.org/10.1021/acs.nanolett.8b04166	journal	November 2018
Anisotropic Dielectric Breakdown Strength of Single Crystal Hexagonal Boron Nitride Hattori, Yoshiaki; Taniguchi, Takashi; Watanabe, Kenji ACS Applied Materials & Interfaces, Vol. 8, Issue 41 https://doi.org/10.1021/acsami.6b06425	journal	October 2016
High-Mobility Holes in Dual-Gated WSe ₂ Field-Effect Transistors Movva, Hema C. P.; Rai, Amritesh; Kang, Sangwoo ACS Nano, Vol. 9, Issue 10 https://doi.org/10.1021/acsnano.5b04611	journal	September 2015
Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides Kim, Changsik; Moon, Inyong; Lee, Daeyeong ACS Nano, Vol. 11, Issue 2 https://doi.org/10.1021/acsnano.6b07159	journal	January 2017
High-Performance Single Layered WSe₂ p-FETs with Chemically Doped Contacts Fang, Hui; Chuang, Steven; Chang, Ting Chia Nano Letters, Vol. 12, Issue 7, p. 3788-3792 https://doi.org/10.1021/nl301702r	journal	June 2012
How 2D semiconductors could extend Moore’s law Li, Ming-Yang; Su, Sheng-Kai; Wong, H. -S. Philip Nature, Vol. 567, Issue 7747 https://doi.org/10.1038/d41586-019-00793-8	journal	March 2019
Two-dimensional semiconductors for transistors Chhowalla, Manish; Jena, Debdeep; Zhang, Hua Nature Reviews Materials, Vol. 1, Issue 11 https://doi.org/10.1038/natrevmats.2016.52	journal	August 2016
Electrical contacts to two-dimensional semiconductors Allain, Adrien; Kang, Jiahao; Banerjee, Kaustav Nature Materials, Vol. 14, Issue 12 https://doi.org/10.1038/nmat4452	journal	November 2015
Graphene transistors Schwierz, Frank Nature Nanotechnology, Vol. 5, Issue 7 https://doi.org/10.1038/nnano.2010.89	journal	May 2010
Thermodynamic behavior of correlated electron-hole fluids in van der Waals heterostructures Qi, Ruishi; Joe, Andrew Y.; Zhang, Zuocheng Nature Communications, Vol. 14, Issue 1 https://doi.org/10.1038/s41467-023-43799-7	journal	December 2023
Single-crystalline van der Waals layered dielectric with high dielectric constant Zhang, Congcong; Tu, Teng; Wang, Jingyue Nature Materials, Vol. 22, Issue 7 https://doi.org/10.1038/s41563-023-01502-7	journal	March 2023
Two-dimensional materials for next-generation computing technologies Liu, Chunsen; Chen, Huawei; Wang, Shuiyuan Nature Nanotechnology, Vol. 15, Issue 7 https://doi.org/10.1038/s41565-020-0724-3	journal	July 2020
Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions Liu, Yuan; Guo, Jian; Zhu, Enbo Nature, Vol. 557, Issue 7707 https://doi.org/10.1038/s41586-018-0129-8	journal	May 2018
Solution-processable 2D semiconductors for high-performance large-area electronics Lin, Zhaoyang; Liu, Yuan; Halim, Udayabagya Nature, Vol. 562, Issue 7726 https://doi.org/10.1038/s41586-018-0574-4	journal	October 2018
Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors Wang, Yan; Kim, Jong Chan; Wu, Ryan J. Nature, Vol. 568, Issue 7750 https://doi.org/10.1038/s41586-019-1052-3	journal	March 2019
Promises and prospects of two-dimensional transistors Liu, Yuan; Duan, Xidong; Shin, Hyeon-Jin Nature, Vol. 591, Issue 7848 https://doi.org/10.1038/s41586-021-03339-z	journal	March 2021
Ultralow contact resistance between semimetal and monolayer semiconductors Shen, Pin-Chun; Su, Cong; Lin, Yuxuan Nature, Vol. 593, Issue 7858 https://doi.org/10.1038/s41586-021-03472-9	journal	May 2021
Strongly correlated excitonic insulator in atomic double layers Ma, Liguo; Nguyen, Phuong X.; Wang, Zefang Nature, Vol. 598, Issue 7882 https://doi.org/10.1038/s41586-021-03947-9	journal	October 2021
P-type electrical contacts for 2D transition-metal dichalcogenides Wang, Yan; Kim, Jong Chan; Li, Yang Nature, Vol. 610, Issue 7930 https://doi.org/10.1038/s41586-022-05134-w	journal	August 2022
Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling Patoary, Naim Hossain; Xie, Jing; Zhou, Guantong Scientific Reports, Vol. 13, Issue 1 https://doi.org/10.1038/s41598-023-30317-4	journal	February 2023
Low-resistance metal contacts to encapsulated semiconductor monolayers with long transfer length Liu, Yang; Liu, Song; Wang, Zhiying Nature Electronics, Vol. 5, Issue 9 https://doi.org/10.1038/s41928-022-00808-9	journal	September 2022
High dielectric constant oxides Robertson, J. The European Physical Journal Applied Physics, Vol. 28, Issue 3, p. 265-291 https://doi.org/10.1051/epjap:2004206	journal	December 2004
The physics and chemistry of the Schottky barrier height Tung, Raymond T. Applied Physics Reviews, Vol. 1, Issue 1 https://doi.org/10.1063/1.4858400	journal	January 2014
Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping Zhang, Siyuan; Chuang, Hsun- Jen; Le, Son T. AIP Advances, Vol. 12, Issue 8 https://doi.org/10.1063/5.0101033	journal	August 2022
2D semiconducting materials for electronic and optoelectronic applications: potential and challenge Kang, Sojung; Lee, Donghun; Kim, Jonghun 2D Materials, Vol. 7, Issue 2 https://doi.org/10.1088/2053-1583/ab6267	journal	February 2020
Electronic structure of a metal-semiconductor interface Louie, Steven G.; Cohen, Marvin L. Physical Review B, Vol. 13, Issue 6 https://doi.org/10.1103/PhysRevB.13.2461	journal	March 1976
Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe 2 : Landau Level Degeneracy, Effective Mass, and Negative Compressibility Fallahazad, Babak; Movva, Hema C. P.; Kim, Kyounghwan Physical Review Letters, Vol. 116, Issue 8 https://doi.org/10.1103/PhysRevLett.116.086601	journal	February 2016
Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe 2 Movva, Hema C. P.; Fallahazad, Babak; Kim, Kyounghwan Physical Review Letters, Vol. 118, Issue 24 https://doi.org/10.1103/PhysRevLett.118.247701	journal	June 2017
Electronic Properties of α − RuCl 3 in Proximity to Graphene Biswas, Sananda; Li, Ying; Winter, Stephen M. Physical Review Letters, Vol. 123, Issue 23 https://doi.org/10.1103/PhysRevLett.123.237201	journal	December 2019
Schottky-Barrier Height Lowering by an Increase of the Substrate Doping in PtSi Schottky Barrier Source/Drain FETs Lousberg, G. P.; Yu, H. Y.; Froment, B. IEEE Electron Device Letters, Vol. 28, Issue 2 https://doi.org/10.1109/LED.2006.889045	journal	February 2007
Air-Stable P-Doping in Record High-Performance Monolayer WSe₂ Devices Chiang, Chin-Cheng; Lan, Hao-Yu; Pang, Chin-Sheng IEEE Electron Device Letters, Vol. 43, Issue 2 https://doi.org/10.1109/LED.2021.3135312	journal	February 2022
2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI Cao, Wei; Kang, Jiahao; Sarkar, Deblina IEEE Transactions on Electron Devices, Vol. 62, Issue 11 https://doi.org/10.1109/TED.2015.2443039	journal	November 2015
Challenges and Limitations of CMOS Scaling for FinFET and Beyond Architectures Razavieh, Ali; Zeitzoff, Peter; Nowak, Edward J. IEEE Transactions on Nanotechnology, Vol. 18 https://doi.org/10.1109/TNANO.2019.2942456	journal	January 2019
2D materials and van der Waals heterostructures Novoselov, K. S.; Mishchenko, A.; Carvalho, A. Science, Vol. 353, Issue 6298 https://doi.org/10.1126/science.aac9439	journal	July 2016
Animal collective behavior: Mechanisms and applications Liu, Xiaofeng; Chen, Guo; Liu, Yu Chinese Science Bulletin, Vol. 68, Issue 23 https://doi.org/10.1360/TB-2023-0165	journal	June 2023

Similar Records

Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe₂ Nanosheet-Based Channels: Implications for Field-Effect Transistors

Journal Article · 2021 · ACS Applied Nano Materials · OSTI ID:1807195

Andrews, Kraig; Rijal, Upendra; Bowman, Arthur; +6 more

Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe₂, MoS₂, and MoSe₂ transistors

Journal Article · 2016 · Nano Letters · OSTI ID:1334435

Chuang, Hsun -Jen; Chamlagain, Bhim; Koehler, Michael; +5 more

Ultrafast and Highly Mobile Photocarriers in Monolayer WSe₂ Doped by α-RuCl₃

Journal Article · 2025 · Nano Letters · OSTI ID:2551843

Zheng, Ting; Low, Emma; Rafizadeh, Neema; +2 more

Related Subjects

36 MATERIALS SCIENCE
A-RuCl3
Ohmic contacts
charge transfer
p-type monolayer WSe2 FET
type-III band alignment

Title: Low Resistance Contact to P-Type Monolayer WSe2

Citation Formats

References (42)

Similar Records

Related Subjects

Title: Low Resistance Contact to P-Type Monolayer WSe₂