Giant energy storage and power density negative capacitance superlattices

Cheema, Suraj S.; Shanker, Nirmaan; Hsu, Shang-Lin; Schaadt, Joseph; Ellis, Nathan M.; Cook, Matthew; Rastogi, Ravi; Pilawa-Podgurski, Robert C. N.; Ciston, Jim; Mohamed, Mohamed; Salahuddin, Sayeef

doi:10.1038/s41586-024-07365-5

Title: Giant energy storage and power density negative capacitance superlattices

Journal Article · 09 April 2024 · Nature (London)

DOI: https://doi.org/10.1038/s41586-024-07365-5 · OSTI ID:2473042

^[1];

^[2]; Hsu, Shang-Lin ^[2]; Schaadt, Joseph ^[2];

^[2]; Cook, Matthew ^[3]; Rastogi, Ravi ^[3]; Pilawa-Podgurski, Robert C. N. ^[2];

^[4]; Mohamed, Mohamed ^[3]; Salahuddin, Sayeef ^[5]

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); University of California, Berkeley, CA (United States)
University of California, Berkeley, CA (United States)
Massachusetts Inst. of Technology (MIT), Lexington, MA (United States). Lincoln Laboratory
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Molecular Foundry
University of California, Berkeley, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Dielectric electrostatic capacitors, because of their ultrafast charge-discharge, are desirable for high-power energy storage applications. Along with ultrafast operation, on-chip integration can enable miniaturized energy storage devices for emerging autonomous microelectronics and microsystems. Moreover, state-of-the-art miniaturized electrochemical energy storage systems-microsupercapacitors and microbatteries-currently face safety, packaging, materials and microfabrication challenges preventing on-chip technological readiness, leaving an opportunity for electrostatic microcapacitors. Here, in this study, we report record-high electrostatic energy storage density (ESD) and power density, to our knowledge, in HfO₂-ZrO₂-based thin film microcapacitors integrated into silicon, through a three-pronged approach. First, to increase intrinsic energy storage, atomic-layer-deposited antiferroelectric HfO₂-ZrO₂ films are engineered near a field-driven ferroelectric phase transition to exhibit amplified charge storage by the negative capacitance effect, which enhances volumetric ESD beyond the best-known back-end-of-the-line-compatible dielectrics (115 J cm^-3). Second, to increase total energy storage, antiferroelectric superlattice engineering scales the energy storage performance beyond the conventional thickness limitations of HfO₂-ZrO₂-based (anti)ferroelectricity (100-nm regime). Third, to increase the storage per footprint, the superlattices are conformally integrated into three-dimensional capacitors, which boosts the areal ESD nine times and the areal power density 170 times that of the best-known electrostatic capacitors: 80 mJ cm^-2 and 300 kW cm^-2, respectively. This simultaneous demonstration of ultrahigh energy density and power density overcomes the traditional capacity-speed trade-off across the electrostatic-electrochemical energy storage hierarchy. Furthermore, the integration of ultrahigh-density and ultrafast-charging thin films within a back-end-of-the-line-compatible process enables monolithic integration of on-chip microcapacitors, which can unlock substantial energy storage and power delivery performance for electronic microsystems.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); Defense Threat Reduction Agency (DTRA); US Air Force

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 2473042

Journal Information:: Nature (London), Journal Name: Nature (London) Journal Issue: 8013 Vol. 629; ISSN 0028-0836

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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