Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field‐Effect Transistors
[1];
[2];
[3];
[5]
- Institute of Physics National Academy of Sciences of Ukraine Pr. Nauky 46 Kyiv 03028 Ukraine
- Frantsevich Institute for Problems in Materials Science National Academy of Sciences of Ukraine Str. Omeliana Pritsaka 3 Kyiv 03142 Ukraine
- Institute of Solid State Physics and Chemistry Uzhhorod University Uzhhorod 88000 Ukraine
- Department of Materials Science and Engineering University of Tennessee Knoxville TN 37996 USA
- Taras Shevchenko National University of Kyiv Faculty of Radiophysics Electronics and Computer Systems Pr. Akademika Hlushkova 4g Kyiv 03022 Ukraine, V. Lashkariov Institute of Semiconductor Physics National Academy of Sciences of Ukraine Pr. Nauky 41 Kyiv 03028 Ukraine
Abstract Analytical calculations corroborated by the finite element modeling show that thin films of Van der Waals ferrielectrics covered by a 2D‐semiconductor are promising candidates for the controllable reduction of the dielectric layer capacitance due to the negative capacitance (NC) effect emerging in the thin films. The NC state is conditioned by energy‐degenerated poly‐domain states of the ferrielectric polarization induced in the films under incomplete screening conditions in the presence of a dielectric layer. Calculations performed for the FET‐type heterostructure “ferrielectric CuInP 2 S 6 film—2D‐MoS 2 single‐layer—SiO 2 dielectric layer” reveal the pronounced size effect of the multilayer capacitance. Derived analytical expressions for the electric polarization and multilayer capacitance allow to predict the thickness range of the dielectric layer and ferrielectric film for which the NC effect is the most pronounced in various Van der Waals ferrielectrics, and the corresponding subthreshold swing becomes much less than the Boltzmann's limit. Obtained results can be useful for the size and temperature control of the NC effect in the steep‐slope ferrielectric FETs.
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- NONE; SC0020145; SC0021118
- OSTI ID:
- 2472967
- Journal Information:
- Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 4 Vol. 11; ISSN 2199-160X
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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