High-current, high-voltage AlN Schottky barrier diodes

Quiñones, C. E.; Khachariya, D.; Reddy, P.; Mita, S.; Almeter, J.; Bagheri, P.; Rathkanthiwar, S.; Kirste, R.; Pavlidis, S.; Kohn, E.; Collazo, R.; Sitar, Z.

doi:10.35848/1882-0786/ad81c9

Title: High-current, high-voltage AlN Schottky barrier diodes

Journal Article · 16 October 2024 · Applied Physics Express

DOI: https://doi.org/10.35848/1882-0786/ad81c9 · OSTI ID:2472668

;

; Reddy, P.; Mita, S.; Almeter, J.; Bagheri, P.; Rathkanthiwar, S.; Kirste, R.;

; Kohn, E.; Collazo, R.; Sitar, Z.

AlN Schottky barrier diodes with low ideality factor (<1.2), low differential ON-resistance (<0.6 mΩ cm ² ), high current density (>5 kA cm ⁻² ), and high breakdown voltage (680 V) are reported. The device structure consisted of a two-layer, quasi-vertical design with a lightly doped AlN drift layer and a highly doped Al _0.75 Ga _0.25 N ohmic contact layer grown on AlN substrates. A combination of simulation, current–voltage measurements, and impedance spectroscopy analysis revealed that the AlN/AlGaN interface introduces a parasitic electron barrier due to the conduction band offset between the two materials. This barrier was found to limit the forward current in fabricated diodes. Further, we show that introducing a compositionally-graded layer between the AlN and the AlGaN reduces the interfacial barrier and increases the forward current density of fabricated diodes by a factor of 10 ⁴ .

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: NONE; AR0001493

OSTI ID:: 2472668

Journal Information:: Applied Physics Express, Journal Name: Applied Physics Express Journal Issue: 10 Vol. 17; ISSN 1882-0778

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: Japan

Language:: English

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