Picosecond carrier dynamics in InAs and GaAs revealed by ultrafast electron microscopy

Perez, Christopher; Ellis, Scott R.; Alcorn, Francis M.; Smoll, Eric J.; Fuller, Elliot J.; Leonard, Francois; Chandler, David; Talin, A. Alec; Bisht, Ravindra Singh; Ramanathan, Shriram; Goodson, Kenneth E.; Kumar, Suhas

doi:10.1126/sciadv.adn8980

Title: Picosecond carrier dynamics in InAs and GaAs revealed by ultrafast electron microscopy

Journal Article · 15 May 2024 · Science Advances

DOI: https://doi.org/10.1126/sciadv.adn8980 · OSTI ID:2471773

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^[3]; Chandler, David ^[3];

^[3]; Bisht, Ravindra Singh ^[4]; Ramanathan, Shriram ^[4];

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Sandia National Laboratories (SNL-CA), Livermore, CA (United States); Stanford University, CA (United States)
Sandia National Laboratories (SNL-CA), Livermore, CA (United States); Intel Corporation, San Jose, CA (United States)
Sandia National Laboratories (SNL-CA), Livermore, CA (United States)
Rutgers University, Piscataway, NJ (United States)
Stanford University, CA (United States)

Understanding the limits of spatiotemporal carrier dynamics, especially in III-V semiconductors, is key to designing ultrafast and ultrasmall optoelectronic components. However, identifying such limits and the properties controlling them has been elusive. Here, using scanning ultrafast electron microscopy, in bulk n-GaAs and p-InAs, we simultaneously measure picosecond carrier dynamics along with three related quantities: subsurface band bending, above-surface vacuum potentials, and surface trap densities. We make two unexpected observations. First, we uncover a negative-time contrast in secondary electrons resulting from an interplay among these quantities. Second, despite dopant concentrations and surface state densities differing by many orders of magnitude between the two materials, their carrier dynamics, measured by photoexcited band bending and filling of surface states, occur at a seemingly common timescale of about 100 ps. This observation may indicate fundamental kinetic limits tied to a multitude of material and surface properties of optoelectronic III-V semiconductors and highlights the need for techniques that simultaneously measure electro-optical kinetic properties.

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Research Organization:: Sandia National Laboratories (SNL-CA), Livermore, CA (United States)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: NA0003525

OSTI ID:: 2471773

Journal Information:: Science Advances, Journal Name: Science Advances Journal Issue: 20 Vol. 10; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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