Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport

Musiienko, Artem; Yang, Fengjiu; Gries, Thomas William; Frasca, Chiara; Friedrich, Dennis; Al-Ashouri, Amran; Sağlamkaya, Elifnaz; Lang, Felix; Kojda, Danny; Huang, Yi-Teng; Stacchini, Valerio; Hoye, Robert L. Z.; Ahmadi, Mahshid; Kanak, Andrii; Abate, Antonio

doi:10.1038/s41467-023-44418-1

Title: Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport

Journal Article · 05 January 2024 · Nature Communications

DOI: https://doi.org/10.1038/s41467-023-44418-1 · OSTI ID:2471208

^[1]; Yang, Fengjiu ^[2];

^[3]; Frasca, Chiara ^[3];

^[1]; Al-Ashouri, Amran ^[1]; Sağlamkaya, Elifnaz ^[4];

^[4]; Kojda, Danny ^[1];

^[5]; Stacchini, Valerio ^[1];

^[6];

^[7];

^[8];

^[3]

Helmholtz-Zentrum Berlin (HZB), (Germany). German Research Centre for Materials and Energy
Helmholtz-Zentrum Berlin (HZB), (Germany). German Research Centre for Materials and Energy; National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Helmholtz-Zentrum Berlin (HZB), (Germany). German Research Centre for Materials and Energy; University of Bielefeld (Germany)
University of Potsdam (Germany)
University of Cambridge (United Kingdom); University of Oxford (United Kingdom)
University of Oxford (United Kingdom)
University of Tennessee, Knoxville, TN (United States)
Eidgenoessische Technische Hochschule (ETH), Zurich (Switzerland); Yuriy Fedkovych Chernivtsi National University (Ukraine)

The knowledge of minority and majority charge carrier properties enables controlling the performance of solar cells, transistors, detectors, sensors, and LEDs. Here, we developed the constant light induced magneto transport method which resolves electron and hole mobility, lifetime, diffusion coefficient and length, and quasi-Fermi level splitting. We demonstrate the implication of the constant light induced magneto transport for silicon and metal halide perovskite films. We resolve the transport properties of electrons and holes predicting the material’s effectiveness for solar cell application without making the full device. The accessibility of fourteen material parameters paves the way for in-depth exploration of causal mechanisms limiting the efficiency and functionality of material structures. To demonstrate broad applicability, we further characterized twelve materials with drift mobilities spanning from 10^–3 to 10³ cm²V^–1s^–1 and lifetimes varying between 10^–9 and 10^–3 seconds. The universality of our method its potential to advance optoelectronic devices in various technological fields.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: Engineering and Physical Sciences Research Council (EPSRC); European Union (EU); National Science Foundation (NSF); USDOE

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 2471208

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 15; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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