Colloidal InAs Quantum Dot-Based Infrared Optoelectronics Enabled by Universal Dual-Ligand Passivation

Si, Min‐Jae; Jee, Seungin; Yang, Minjung; Kim, Dongeon; Ahn, Yongnam; Lee, Seungjin; Kim, Changjo; Bae, In‐Ho; Baek, Se‐Woong

doi:10.1002/advs.202306798

Title: Colloidal InAs Quantum Dot-Based Infrared Optoelectronics Enabled by Universal Dual-Ligand Passivation

Journal Article · 19 January 2024 · Advanced Science

DOI: https://doi.org/10.1002/advs.202306798 · OSTI ID:2470513

Si, Min‐Jae ^[1]; Jee, Seungin ^[1]; Yang, Minjung ^[1]; Kim, Dongeon ^[1]; Ahn, Yongnam ^[1]; Lee, Seungjin ^[2]; Kim, Changjo ^[3]; Bae, In‐Ho ^[4];

^[1]

Korea Univ., Seoul, (Korea, Republic of)
Korea Inst. of Energy Technology (KENTECH), Naju (Korea, Republic of)
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Korea Research Inst. of Standards and Science, Daejeon (Korea, Republic of)

Solution-processed low-bandgap semiconductors are crucial to next-generation infrared (IR) detection for various applications, such as autonomous driving, virtual reality, recognitions, and quantum communications. In particular, III–V group colloidal quantum dots (CQDs) are interesting as nontoxic bandgap-tunable materials and suitable for IR absorbers; however, the device performance is still lower than that of Pb-based devices. Herein, a universal surface-passivation method of InAs CQDs enabled by intermediate phase transfer (IPT), a preliminary process that exchanges native ligands with aromatic ligands on the CQD surface is presented. IPT yields highly stable CQD ink. In particular, desirable surface ligands with various reactivities can be obtained by dispersing them in green solvents. Furthermore, CQD near-infrared (NIR) photodetectors are demonstrated using solution processes. Careful surface ligand control via IPT is revealed that enables the modulation of surface-mediated photomultiplication, resulting in a notable gain control up to ≈10 with a fast rise/fall response time (≈12/36 ns). Considering the figure of merit (FOM), EQE versus response time (or –3 dB bandwidth), the optimal CQD photodiode yields one of the highest FOMs among all previously reported solution-processed nontoxic semiconductors comprising organics, perovskites, and CQDs in the NIR wavelength range.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: 89233218CNA000001

OSTI ID:: 2470513

Journal Information:: Advanced Science, Journal Name: Advanced Science Journal Issue: 13 Vol. 11; ISSN 2198-3844

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
59 BASIC BIOLOGICAL SCIENCES
colloidal quantum dots
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surface passivation

Title: Colloidal InAs Quantum Dot-Based Infrared Optoelectronics Enabled by Universal Dual-Ligand Passivation

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