Flash healing of laser-induced graphene

Cheng, Le; Yeung, Chi Shun; Huang, Libei; Ye, Ge; Yan, Jie; Li, Wanpeng; Yiu, Chunki; Chen, Fu-Rong; Shen, Hanchen; Tang, Ben Zhong; Ren, Yang; Yu, Xinge; Ye, Ruquan

doi:10.1038/s41467-024-47341-1

Title: Flash healing of laser-induced graphene

Journal Article · 03 April 2024 · Nature Communications

DOI: https://doi.org/10.1038/s41467-024-47341-1 · OSTI ID:2470131

Cheng, Le ^[1]; Yeung, Chi Shun ^[1]; Huang, Libei ^[2]; Ye, Ge ^[3]; Yan, Jie ^[3];

^[3]; Yiu, Chunki ^[3];

^[3]; Shen, Hanchen ^[4];

^[5];

^[6];

^[3];

^[1]

City Univ. of Hong Kong (Hong Kong); City University of Hong Kong Research Institute, Shenzhen, Guangdong (China)
City Univ. of Hong Kong (Hong Kong); The Hong Kong Polytechnic University, Hong Kong (China)
City Univ. of Hong Kong (Hong Kong)
The Chinese University of Hong Kong, Shenzhen, Guangdong (China)
The Chinese University of Hong Kong, Shenzhen, Guangdong (China); The Hong Kong University of Science and Technology (HKUST), Hong Kong (China)
City Univ. of Hong Kong (Hong Kong); City Univ. of Hong Kong, Kowloon (Hong Kong)

The advancement of laser-induced graphene (LIG) technology has streamlined the fabrications of flexible graphene devices. However, the ultrafast kinetics triggered by laser irradiation generates intrinsic amorphous characteristics, leading to high resistivity and compromised performance in electronic devices. Healing graphene defects in specific patterns is technologically challenging by conventional methods. Herein, we report the rapid rectification of LIG’s topological defects by flash Joule heating in milliseconds (referred to as F-LIG), whilst preserving its overall structure and porosity. The F-LIG exhibits a decreased I_D/I_G ratio from 0.84 – 0.33 and increased crystalline domain from Raman analysis, coupled with a 5-fold surge in conductivity. Pair distribution function and atomic-resolution imaging delineate a broader-range order of F-LIG with a shorter C-C bond of 1.425 Å. The improved crystallinity and conductivity of F-LIG with excellent flexibility enables its utilization in high-performance soft electronics and low-voltage disinfections. Notably, our F-LIG/polydimethylsiloxane strain sensor exhibits a gauge factor of 129.3 within 10% strain, which outperforms pristine LIG by 800%, showcasing significant potential for human-machine interfaces.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 2470131

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 15; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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