Logic operations with active topological defects

Zhang, Rui; Mozaffari, Ali; de Pablo, Juan J.

doi:10.1126/sciadv.abg9060

Title: Logic operations with active topological defects

Journal Article · 25 February 2022 · Science Advances

DOI: https://doi.org/10.1126/sciadv.abg9060 · OSTI ID:2469982

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University of Chicago, IL (United States); Hong Kong University of Science and Technology (HKUST) (Hong Kong)
University of Chicago, IL (United States); OpenEye Scientific Software, Inc., Santa Fe, NM (United States)
University of Chicago, IL (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)

Logic operations performed by semiconductor-based transistors are the basis of modern computing. There is considerable interest in creating autonomous materials systems endowed with the capability to make decisions. In this work, we introduce the concept of using topological defects in active matter to perform logic operations. When an extensile active stress in a nematic liquid crystal is turned on, +1/2 defects can self-propel, in analogy to electron transport under a voltage gradient. By relying on hydrodynamic simulations of active nematics, we demonstrate that patterns of activity, when combined with surfaces imparting certain orientations, can be used to control the formation and transport of +1/2 defects. We further show that asymmetric high- and low-activity patterns can be used to create effective defect gates, tunnels, and amplifiers. The proposed active systems offer the potential to perform computations and transmit information in active soft materials, including actin-, tubulin-, and cell-based systems.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: National Science Foundation (NSF); Research Grants Council (RGC); USDOE

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 2469982

Journal Information:: Science Advances, Journal Name: Science Advances Journal Issue: 8 Vol. 8; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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