Characterization of Mn5Ge3 Contacts on a Shallow Ge/SiGe Heterostructure

Hutchins-Delgado, Troy A.; Addamane, Sadhvikas J.; Lu, Ping; Lu, Tzu-Ming

doi:10.3390/nano14060539

Title: Characterization of Mn₅Ge₃ Contacts on a Shallow Ge/SiGe Heterostructure

Journal Article · 18 March 2024 · Nanomaterials

DOI: https://doi.org/10.3390/nano14060539 · OSTI ID:2469902

^[1]; Addamane, Sadhvikas J. ^[2]; Lu, Ping ^[3];

^[2]

Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Center for Integrated Nanotechnologies, Albuquerque, NM (United States); University of New Mexico, Albuquerque, NM (United States)
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Center for Integrated Nanotechnologies, Albuquerque, NM (United States)
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Mn₅Ge₃ is a ferromagnetic phase of the Mn-Ge system that is a potential contact material for efficient spin injection and detection. Here, we investigate the creation of Mn₅Ge₃-based contacts on a Ge/SiGe quantum well heterostructure via solid-state synthesis. X-ray diffraction spectra fitting indicates the formation of Mn₅Ge₃-based contacts on bulk Ge and Ge/SiGe. High-resolution scanning transmission electron microscopy imaging and energy dispersive X-ray spectroscopy verify the correct Mn₅Ge₃-based phase formation. Schottky diode measurements, transmission line measurements, and Hall measurements reveal that Mn₅Ge₃-based contacts serve as good p-type contacts for Ge/SiGe quantum well heterostructures due to having a low Schottky barrier height of 0.10 eV (extracted from a Mn₅Ge₃/n-Ge analogue) and a contact resistance in the order of 1 kΩ. Furthermore, we show that these electrical characteristics have a gate-voltage dependence, thereby providing tunability.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: NA0003525

OSTI ID:: 2469902

Journal Information:: Nanomaterials, Journal Name: Nanomaterials Journal Issue: 6 Vol. 14; ISSN 2079-4991

Publisher:: MDPICopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
Ge/SiGe
Mn5Ge3
chemistry
germanide
materials science
phase formation
physics
science & technology
solid-state synthesis
thin film

Title: Characterization of Mn5Ge3 Contacts on a Shallow Ge/SiGe Heterostructure

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Title: Characterization of Mn₅Ge₃ Contacts on a Shallow Ge/SiGe Heterostructure