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Title: Imaging dark charge emitters in diamond via carrier-to-photon conversion

Journal Article · · Science Advances

The application of color centers in wide-bandgap semiconductors to nanoscale sensing and quantum information processing largely rests on our knowledge of the surrounding crystalline lattice, often obscured by the countless classes of point defects the material can host. Here, we monitor the fluorescence from a negatively charged nitrogen-vacancy (NV) center in diamond as we illuminate its vicinity. Cyclic charge state conversion of neighboring point defects sensitive to the excitation beam leads to a position-dependent stream of photo-generated carriers whose capture by the probe NV leads to a fluorescence change. This “charge-to-photon” conversion scheme allows us to image other individual point defects surrounding the probe NV, including nonfluorescent “single-charge emitters” that would otherwise remain unnoticed. Given the ubiquity of color center photochromism, this strategy may likely find extensions to material systems other than diamond.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
Grant/Contract Number:
NA0003525
OSTI ID:
2469869
Journal Information:
Science Advances, Journal Name: Science Advances Journal Issue: 1 Vol. 8; ISSN 2375-2548
Publisher:
AAASCopyright Statement
Country of Publication:
United States
Language:
English

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