Trade-off between processability and device performance in donor–acceptor semiconductors revealed using discrete siloxane side chains

van den Bersselaar, Bart W. L.; Cattenstart, Elisabeth H. W.; Elangovan, Kavinraaj Ella; Yen-Chi, Chen; de Waal, Bas F. M.; van der Tol, Joost; Diao, Ying; Meijer, E. W.; Vantomme, Ghislaine

doi:10.1039/d4tc00875h

Title: Trade-off between processability and device performance in donor–acceptor semiconductors revealed using discrete siloxane side chains

Journal Article · 24 April 2024 · Journal of Materials Chemistry C

DOI: https://doi.org/10.1039/d4tc00875h · OSTI ID:2469568

^[1]; Cattenstart, Elisabeth H. W. ^[1]; Elangovan, Kavinraaj Ella ^[2];

^[2]; de Waal, Bas F. M. ^[1]; van der Tol, Joost ^[1];

^[2];

^[1];

^[1]

Eindhoven University of Technology (The Netherlands)
University of Illinois Urbana-Champaign, IL (United States)

Donor–acceptor polymeric semiconductors are crucial for state-of-the-art applications, such as electronic skin mimics. The processability, and thus solubility, of these polymers in benign solvents is critical and can be improved through side chain engineering. Nevertheless, the impact of novel side chains on backbone orientation and emerging device properties often remains to be elucidated. Here, we investigate the influence of elongated linear and branched discrete oligodimethylsiloxane (oDMS) side chains on solubility and device performance. Thereto, diketopyrrolopyrrole–thienothiophene polymers are equipped with various oDMS pendants (PDPPTT-Si_n) and subsequently phase separated into lamellar domains. The introduction of a branching point in the siloxane significantly enhanced the solubility of the polymer, as a result of increased backbone distortion. Simultaneously, the charge carrier mobility of the polymers decreased by an order of magnitude upon functionalization with long and/or branched siloxanes. This work unveils the intricate balance between processability and device performance in organic semiconductors, which is key for the development of next-generation electronic devices.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: National Aeronautics and Space Administration (NASA); US National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: SC0012704

OSTI ID:: 2469568

Journal Information:: Journal of Materials Chemistry C, Journal Name: Journal of Materials Chemistry C Journal Issue: 18 Vol. 12; ISSN 2050-7526

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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