Insulator‐to‐Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors
[1];
- Department of Physics University of Arkansas Fayetteville AR 72701 USA
- Department of Physics University of North Texas Denton TX 76205 USA
- Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore, Quantum Materials Science Unit Okinawa Institute of Science and Technology (OIST) Okinawa 904‐0495 Japan
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7) Department of Physics Princeton University Princeton NJ 08544 USA
- National High Magnetic Field Lab Tallahassee FL 32310 USA
- Materials Science and Engineering Program Institute for Nanoscience and Engineering University of Arkansas Fayetteville AR 72701 USA
- Department of Physics University of Arkansas Fayetteville AR 72701 USA, MonArk NSF Quantum Foundry University of Arkansas Fayetteville AR 72701 USA
- Department of Chemistry and Biochemistry Wichita State University Wichita KS 67260 USA
- Center for Basic Research on Materials National Institute for Materials Science (NIMS) Tsukuba‐city Ibaraki 305‐0047 Japan, Department of Chemistry University of Cambridge Cambridge CB2 1EW UK
- Center for Basic Research on Materials National Institute for Materials Science (NIMS) Tsukuba‐city Ibaraki 305‐0047 Japan
- Department of Physics University of Arkansas Fayetteville AR 72701 USA, Materials Science and Engineering Program Institute for Nanoscience and Engineering University of Arkansas Fayetteville AR 72701 USA, MonArk NSF Quantum Foundry University of Arkansas Fayetteville AR 72701 USA
- Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7) Department of Physics Princeton University Princeton NJ 08544 USA, Princeton Institute for Science and Technology of Materials Princeton University Princeton NJ 08544 USA, Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
Abstract Magnetotransport, the response of electrical conduction to external magnetic field, acts as an important tool to reveal fundamental concepts behind exotic phenomena and plays a key role in enabling spintronic applications. Magnetotransport is generally sensitive to magnetic field orientations. In contrast, efficient and isotropic modulation of electronic transport, which is useful in technology applications such as omnidirectional sensing, is rarely seen, especially for pristine crystals. Here a strategy is proposed to realize extremely strong modulation of electron conduction by magnetic field which is independent of field direction. GdPS, a layered antiferromagnetic semiconductor with resistivity anisotropies, supports a field‐driven insulator‐to‐metal transition with a paradoxically isotropic gigantic negative magnetoresistance insensitive to magnetic field orientations. This isotropic magnetoresistance originates from the combined effects of a near‐zero spin–orbit coupling of Gd 3+ ‐based half‐filling f ‐electron system and the strong on‐site f – d exchange coupling in Gd atoms. These results not only provide a novel material system with extraordinary magnetotransport that offers a missing block for antiferromagnet‐based ultrafast and efficient spintronic devices, but also demonstrate the key ingredients for designing magnetic materials with desired transport properties for advanced functionalities.
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- NONE; FG02-05ER46200; SC0022006
- OSTI ID:
- 2466262
- Journal Information:
- Advanced Materials, Journal Name: Advanced Materials Journal Issue: 48 Vol. 36; ISSN 0935-9648
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- Germany
- Language:
- English
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