Mapping twist-tuned multiband topology in bilayer WSe2

Foutty, Benjamin A.; Kometter, Carlos R.; Devakul, Trithep; Reddy, Aidan P.; Watanabe, Kenji; Taniguchi, Takashi; Fu, Liang; Feldman, Benjamin E.

doi:10.1126/science.adi4728

Title: Mapping twist-tuned multiband topology in bilayer WSe₂

Journal Article · 17 April 2024 · Science

DOI: https://doi.org/10.1126/science.adi4728 · OSTI ID:2440966

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Stanford Univ., CA (United States); SLAC
Stanford Univ., CA (United States)
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
National Institute for Materials Science (NIMS), Tsukuba (Japan)
Stanford Univ., CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)

Semiconductor moiré superlattices have been shown to host a wide array of interaction-driven ground states. However, twisted homobilayers have been difficult to study in the limit of large moiré wavelengths, where interactions are most dominant. In this study, we conducted local electronic compressibility measurements of twisted bilayer WSe₂ (tWSe₂) at small twist angles. We demonstrated multiple topological bands that host a series of Chern insulators at zero magnetic field near a “magic angle” around 1.23°. Using a locally applied electric field, we induced a topological quantum-phase transition at one hole per moiré unit cell. Finally, our work establishes the topological phase diagram of a generalized Kane-Mele-Hubbard model in tWSe₂, demonstrating a tunable platform for strongly correlated topological phases.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: US Air Force Office of Scientific Research (AFOSR); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-76SF00515; SC0023109

OSTI ID:: 2440966

Journal Information:: Science, Journal Name: Science Journal Issue: 6693 Vol. 384; ISSN 0036-8075

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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