Epitaxial Growth of Large-Scale 2D CrTe2 Films on Amorphous Silicon Wafers With Low Thermal Budget

Zhang, Xiaoqian; Li, Yue; Lu, Qiangsheng; Xiang, Xueqiang; Sun, Xiaozhen; Tang, Chunli; Mahdi, Muntasir; Conner, Clayton; Cook, Jacob; Xiong, Yuzan; Inman, Jerad; Jin, Wencan; Liu, Chang; Cai, PeiYu; Santos, Elton J. G.; Phatak, Charudatta; Zhang, Wei; Gao, Nan; Niu, Wei; Bian, Guang; Li, Peng; Yu, Dapeng; Long, Shibing

doi:10.1002/adma.202311591

Title: Epitaxial Growth of Large-Scale 2D CrTe₂ Films on Amorphous Silicon Wafers With Low Thermal Budget

Journal Article · 01 March 2024 · Advanced Materials

DOI: https://doi.org/10.1002/adma.202311591 · OSTI ID:2439848

Zhang, Xiaoqian ^[1]; Li, Yue ^[2]; Lu, Qiangsheng ^[3]; Xiang, Xueqiang ^[4];

^[4]; Tang, Chunli ^[5];

^[5]; Conner, Clayton ^[6]; Cook, Jacob ^[6]; Xiong, Yuzan ^[7]; Inman, Jerad ^[8]; Jin, Wencan ^[5]; Liu, Chang ^[9]; Cai, PeiYu ^[10]; Santos, Elton J. G. ^[11]; Phatak, Charudatta ^[12]; Zhang, Wei ^[8]; Gao, Nan ^[4]; Niu, Wei ^[13]; Bian, Guang ^[6] more »

Southern University of Science and Technology (SUSTech), Shenzhen (China); Southeast Univ., Nanjing (China)
Argonne National Laboratory (ANL), Argonne, IL (United States)
Univ. of Missouri, Columbia, MO (United States); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Univ. of Science and Technology of China, Hefei (China)
Auburn Univ., AL (United States)
Univ. of Missouri, Columbia, MO (United States)
University of North Carolina, Chapel Hill, NC (United States)
University of North Carolina, Chapel Hill, NC (United States); Oakland Univ., Rochester, MI (United States)
Southern University of Science and Technology (SUSTech), Shenzhen (China)
Univ. of Edinburgh, Scotland (United Kingdom)
Univ. of Edinburgh, Scotland (United Kingdom); Donostia International Physics Center (DIPC), San Sebastian (Spain)
Argonne National Laboratory (ANL), Argonne, IL (United States); Northwestern Univ., Evanston, IL (United States)
Nanjing University of Posts and Telecommunications (China)

2D van der Waals (vdW) magnets open landmark horizons in the development of innovative spintronic device architectures. However, their fabrication with large scale poses challenges due to high synthesis temperatures (>500 °C) and difficulties in integrating them with standard complementary metal-oxide semiconductor (CMOS) technology on amorphous substrates such as silicon oxide (SiO₂) and silicon nitride (SiN_x). Here, a seeded growth technique for crystallizing CrTe₂ films on amorphous SiN_x/Si and SiO₂/Si substrates with a low thermal budget is presented. This fabrication process optimizes large-scale, granular atomic layers on amorphous substrates, yielding a substantial coercivity of 11.5 kilo-oersted, attributed to weak intergranular exchange coupling. Field-driven Néel-type stripe domain dynamics explain the amplified coercivity. Moreover, the granular CrTe₂ devices on Si wafers display significantly enhanced magnetoresistance, more than doubling that of single-crystalline counterparts. Current-assisted magnetization switching, enabled by a substantial spin–orbit torque with a large spin Hall angle (85) and spin Hall conductivity (1.02 × 10⁷ ℏ/2e Ω^-1 m^-1), is also demonstrated. These observations underscore the proficiency in manipulating crystallinity within integrated 2D magnetic films on Si wafers, paving the way for large-scale batch manufacturing of practical magnetoelectronic and spintronic devices, heralding a new era of technological innovation.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); National Science Foundation (NSF); National Natural Science Foundation of China (NSFC); China Postdoctoral Science Foundation; Engineering and Physical Sciences Research Council (EPSRC); China Scholarship Council (CSC)

Grant/Contract Number:: AC05-00OR22725; AC02-06CH11357

OSTI ID:: 2439848

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 24 Vol. 36; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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