3D‐Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device

Wood, Alexander A.; McCloskey, Daniel J.; Dontschuk, Nikolai; Lozovoi, Artur; Goldblatt, Russell M.; Delord, Tom; Broadway, David A.; Tetienne, Jean‐Philippe; Johnson, Brett C.; Mitchell, Kaih T.; Lew, Christopher T. ‐K.; Meriles, Carlos A.; Martin, Andy M.

doi:10.1002/adma.202405338

Title: 3D‐Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device

Journal Article · 23 August 2024 · Advanced Materials

DOI: https://doi.org/10.1002/adma.202405338 · OSTI ID:2437846

^[1]; McCloskey, Daniel J. ^[1]; Dontschuk, Nikolai ^[1]; Lozovoi, Artur ^[2]; Goldblatt, Russell M. ^[1]; Delord, Tom ^[2]; Broadway, David A. ^[3]; Tetienne, Jean‐Philippe ^[3]; Johnson, Brett C. ^[3]; Mitchell, Kaih T. ^[1]; Lew, Christopher T. ‐K. ^[1]; Meriles, Carlos A. ^[4]; Martin, Andy M. ^[1]

School of Physics University of Melbourne Parkville Victoria 3010 Australia
CUNY‐The City College of New York New York 10031 USA
School of Science RMIT University Melbourne Victoria 3000 Australia
CUNY‐The City College of New York New York 10031 USA, CUNY ‐ The Graduate Center New York NY 10016 USA

Abstract Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide‐bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically‐active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin‐electric field coupling to measure electronic phenomena. In this work, charge‐state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen‐vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. Optical control is used to change the charge state of background impurities inside the diamond on‐demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. Conducting channels that control carrier flow, key steps toward optically reconfigurable, wide‐bandgap optoelectronics are then engineered using light. This work might be extended to probe other wide‐bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic and quantum technologies.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0012704

OSTI ID:: 2437846

Journal Information:: Advanced Materials, Journal Name: Advanced Materials; ISSN 0935-9648

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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