Influence of excess silicon on polytype selection during metal-mediated epitaxy of GaN nanowires

Liu, A.; Xi, Z.; Li, M.; Yang, J. C.; Qi, L.; Goldman, R. S.

doi:10.1063/5.0210669

Title: Influence of excess silicon on polytype selection during metal-mediated epitaxy of GaN nanowires

Journal Article · 23 July 2024 · Applied Physics Letters

DOI: https://doi.org/10.1063/5.0210669 · OSTI ID:2433985

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Univ. of Michigan, Ann Arbor, MI (United States)
Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN); Univ. of Pittsburgh, PA (United States)

For this work, we have examined the origins of polytype selection during metal-mediated molecular-beam epitaxy of GaN nanowires (NWs). High-angle annular dark-field scanning transmission electron microscopy reveals [111]-oriented zinc blende (ZB) NWs and [0001]-oriented wurtzite (WZ) NWs, with SixNy at the interface between individual NWs and the Si (001) substrate. Quantitative energy dispersive x-ray spectroscopy reveals a notably higher Si concentration of 7.0% ± 2.3% in zinc blende (ZB) NWs than 2.3% ± 1.2% in wurtzite (WZ) NWs. Meanwhile, density functional theory calculations show that incorporation of 8 at. % Si on the Ga sublattice inverts the difference in formation energies between WZ and ZB GaN, such that the ZB polytype of GaN is stabilized. This identification of Si and other ZB polytype stabilizers will enable the development of polytype heterostructures in a wide variety of WZ-preferring compounds.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: SC0012704; SC0023222

OSTI ID:: 2433985

Report Number(s):: BNL--225977-2024-JAAM

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 125; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Influence of excess silicon on polytype selection during metal-mediated epitaxy of GaN nanowires

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