TCAD simulations of humidity-induced breakdown of silicon sensors

Ninca, I-S.; Bloch, I.; Brüers, B.; Fadeyev, V.; Fernandez-Tejero, J.; Jessiman, C.; Keller, J.; Klein, C. T.; Koffas, T.; Lacker, H. M.; Li, P.; Scharf, C.; Staats, E.; Ullan, M.; Unno, Y.

doi:10.1016/j.nima.2024.169729

Title: TCAD simulations of humidity-induced breakdown of silicon sensors

Journal Article · 01 October 2024 · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment

DOI: https://doi.org/10.1016/j.nima.2024.169729 · OSTI ID:2429127

; Bloch, I.; Brüers, B.; Fadeyev, V.; Fernandez-Tejero, J.; Jessiman, C.; Keller, J.; Klein, C. T.; Koffas, T.; Lacker, H. M.; Li, P.; Scharf, C.; Staats, E.; Ullan, M.; Unno, Y.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0010107

OSTI ID:: 2429127

Journal Information:: Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment, Journal Name: Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment Journal Issue: C Vol. 1067; ISSN 0168-9002

Publisher:: ElsevierCopyright Statement

Country of Publication:: Netherlands

Language:: English

References (16)

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Mobile electric charges on insulating oxides with application to oxide covered silicon p-n junctions Shockley, W.; Hooper, W. W.; Queisser, H. J. Surface Science, Vol. 2 https://doi.org/10.1016/0039-6028(64)90067-6	journal	January 1964
Surface effects in segmented silicon sensors Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 845 https://doi.org/10.1016/j.nima.2016.06.032	journal	February 2017
Humidity sensitivity of large area silicon sensors: Study and implications Fernández-Tejero, J.; Allport, P. P.; Aviñó, O. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 978 https://doi.org/10.1016/j.nima.2020.164406	journal	October 2020
Quality Assurance methodology for the ATLAS Inner Tracker strip sensor production Ullán, M.; Allport, P.; Dette, K. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 981 https://doi.org/10.1016/j.nima.2020.164521	journal	November 2020
Stability of thermally oxidized silicon junctions in wet atmospheres Atalla, M. M.; Bray, A. R.; Lindner, R. Proceedings of the IEE - Part B: Electronic and Communication Engineering, Vol. 106, Issue 17S https://doi.org/10.1049/pi-b-2.1959.0204	journal	May 1959
Analysis of humidity sensitivity of silicon strip sensors for ATLAS upgrade tracker, pre- and post-irradiation Fernández-Tejero, J.; Affolder, A.; Bach, E. Journal of Instrumentation, Vol. 18, Issue 02 https://doi.org/10.1088/1748-0221/18/02/P02012	journal	February 2023
Specifications and pre-production of n⁺-in-p large-format strip sensors fabricated in 6-inch silicon wafers, ATLAS18, for the Inner Tracker of the ATLAS Detector for High-Luminosity Large Hadron Collider Unno, Y.; Abidi, H.; Affolder, A. Journal of Instrumentation, Vol. 18, Issue 03 https://doi.org/10.1088/1748-0221/18/03/T03008	journal	March 2023
Ionization Rates for Electrons and Holes in Silicon Chynoweth, A. G. Physical Review, Vol. 109, Issue 5 https://doi.org/10.1103/PhysRev.109.1537	journal	March 1958
Hot-carrier luminescence in Si Bude, Jeff; Sano, Nobuyuki; Yoshii, Akira Physical Review B, Vol. 45, Issue 11 https://doi.org/10.1103/PhysRevB.45.5848	journal	March 1992
A multimechanism model for photon generation by silicon junctions in avalanche breakdown Akil, N.; Kerns, S. E.; Kerns, D. V. IEEE Transactions on Electron Devices, Vol. 46, Issue 5 https://doi.org/10.1109/16.760412	journal	May 1999
Electron and hole mobility in silicon at large operating temperatures. I. Bulk mobility Reggiani, S.; Valdinoci, M.; Colalongo, L. IEEE Transactions on Electron Devices, Vol. 49, Issue 3 https://doi.org/10.1109/16.987121	journal	March 2002
Currents Induced by Electron Motion Ramo, S. Proceedings of the IRE, Vol. 27, Issue 9 https://doi.org/10.1109/JRPROC.1939.228757	journal	September 1939
High-voltage planar p-n junctions Kao, Y. C.; Wolley, E. D. Proceedings of the IEEE, Vol. 55, Issue 8 https://doi.org/10.1109/PROC.1967.5842	journal	January 1967
Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature Canali, C.; Majni, G.; Minder, R. IEEE Transactions on Electron Devices, Vol. 22, Issue 11 https://doi.org/10.1109/T-ED.1975.18267	journal	November 1975
Investigation of Irradiated Silicon Detectors by Edge-TCT Kramberger, G.; Cindro, V.; Mandic, I. IEEE Transactions on Nuclear Science, Vol. 57, Issue 4 https://doi.org/10.1109/TNS.2010.2051957	journal	August 2010

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