Probing ferroelectric domain structures and their switching dynamics in SrBi2Ta2O9 by in-situ electric biasing in transmission electron microscopy

Mun, Junsik; Huang, Fei-Ting; Pivak, Yevheniy; Fang, Xiaochen; Camino, Fernando; Cheong, Sang-Wook; Zhu, Yimei; Han, Myung-Geun

doi:10.1038/s43246-024-00593-2

Title: Probing ferroelectric domain structures and their switching dynamics in SrBi2Ta2O9 by in-situ electric biasing in transmission electron microscopy

Journal Article · 09 August 2024 · Communications Materials

DOI: https://doi.org/10.1038/s43246-024-00593-2 · OSTI ID:2429038

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; Pivak, Yevheniy;

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Abstract Lead-free SrBi ₂ Ta ₂ O ₉ (SBT) has been a promising ferroelectric material for various applications such as electronics and data storage due to its outstanding ferroelectric properties including high fatigue endurance and low leakage current. However, the atomic-scale domain structure and switching dynamics of ferroelectric SBT remain elusive. This study reveals that spontaneous polarization arises from canted bismuth-cation displacements, forming 90° and Ising-type 180° domain walls. Interestingly, topological pairs of ferroelectric vortex and antivortex connect ferroelectric boundaries where three domain walls converge. In situ electrical biasing transmission electron microscopy (TEM) reveals the dominance of 180° switching over 90°, where oxygen octahedral connectivity is protected by ferroelastic energy in the 90° domain wall. Consequently, all 180° domain walls and (anti)vortices are removed, leaving only 90° domain walls in the electrically poled states. Chemical deterioration along domain walls highlights vulnerability of SBT to ferroelectric fatigue. This study provides insight into crucial aspects for practical applications of SBT.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0012704

OSTI ID:: 2429038

Journal Information:: Communications Materials, Journal Name: Communications Materials Journal Issue: 1 Vol. 5; ISSN 2662-4443

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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