Magnetization dynamics driven by displacement currents across a magnetic tunnel junction

Safeer, C. K.; Keatley, Paul S.; Skowroński, Witold; Mojsiejuk, Jakub; Yakushiji, Kay; Fukushima, Akio; Yuasa, Shinji; Bedau, Daniel; Casanova, Fèlix; Hueso, Luis E.; Hicken, Robert J.; Pinna, Daniele; van der Laan, Gerrit; Hesjedal, Thorsten

doi:10.1103/PhysRevApplied.22.024019

Title: Magnetization dynamics driven by displacement currents across a magnetic tunnel junction

Journal Article · 07 August 2024 · Physical Review Applied

DOI: https://doi.org/10.1103/PhysRevApplied.22.024019 · OSTI ID:2427041

; Keatley, Paul S.; Skowroński, Witold;

;

; Hicken, Robert J.;

;

Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of a frequency-dependent capacitive current effect in $Co Fe B / Mg O$ -based MTJs and its influence on magnetization dynamics using a time-resolved magneto-optical Kerr effect technique. In our device, operating at gigahertz frequencies, we find a large displacement current of the order of mA, which does not break the tunnel barrier of the MTJ. Importantly, this current generates an Oersted field and spin-orbit torque, inducing magnetization dynamics. Our discovery holds promise for building robust MTJ devices operating under high current conditions, also highlighting the significance of capacitive impedance in high-frequency magnetotransport techniques. Published by the American Physical Society 2024

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Sponsoring Organization:: USDOE

OSTI ID:: 2427041

Journal Information:: Physical Review Applied, Journal Name: Physical Review Applied Journal Issue: 2 Vol. 22; ISSN 2331-7019; ISSN PRAHB2

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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