Effects of structural defects on optical properties of InxGa1-xN layers and quantum wells

Liliental-Weber, Zuzanna; dos Reis, Roberto

doi:10.1063/5.0185713

Title: Effects of structural defects on optical properties of In_xGa_1-xN layers and quantum wells

Journal Article · 29 February 2024 · Journal of Applied Physics

DOI: https://doi.org/10.1063/5.0185713 · OSTI ID:2426590

^[1];

^[2]

Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Northwestern University, Evanston, IL (United States)

This review concentrates on the microstructure of In_xGa_1-xN layers and quantum wells (QWs) in relation to their optical properties. The microstructure of In_xGa_1-xN, with a constant In(x) concentration, shifts with layer thickness. Only layers below 100 nm for x = 0.1 are nearly defect-free. A photoluminescence peak is observed at 405 nm, in line with ~10% In, suggesting band-edge luminescence. Layers with greater thickness and In content present a corrugated surface with numerous structural defects, including V-defects, causing redshifts and multi-peaks in photoluminescence up to 490 nm. These defects, resembling those in GaN, lead to a corrugated sample surface. Atomic force microscopy shows a 3.7-fold larger corrugation in samples with 20 QWs compared to those with 5 QWs measured on 2 × 2 μm² areas. Like in GaN, dual growth on different crystallographic planes results in varied QW thicknesses, influencing optical traits of devices made from In_xGa_1-xN layers. The purpose of this review and the chosen subject is to highlight the significant contribution of Wladek Walukiewicz and his group to the current research on the properties of In_xGa_1-xN, which are crucial alloys in the field of optoelectronics.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); USDOE Office of Science (SC), High Energy Physics (HEP)

Grant/Contract Number:: AC02-05CH11231; AC03-76SF00098

OSTI ID:: 2426590

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 135; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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