Demonstration of a 4.32 μ m cutoff InAsSbBi n B n photodetector, a lattice-matched random alloy III–V solution for mid-wave infrared sensing

Journal Article · 31 July 2023 · Applied Physics Letters

DOI: https://doi.org/10.1063/5.0161051 · OSTI ID:2422543

Webster, P. T. ; Logan, J. V. ; Helms, L. ; Grant, P. C. ; Hains, C. ; Carrasco, R. A. ; Newell, A. T. ; Milosavljevic, M. S. ; Johnson, S. R. ; Balakrishnan, G. ; Maestas, D. ; Morath, C. P.

InAsSbBi nBn photodetectors are demonstrated that are lattice-matched to the underlying GaSb substrate with a 4.32 μm wavelength cutoff at 150 K that is 0.3 μm longer than that of lattice-matched InAsSb at this temperature reflecting a 0.5% Bi mole fraction in the InAsSbBi active region. A low growth temperature was utilized to facilitate the incorporation of Bi, resulting in a minority carrier lifetime on the order of 24 ns in the InAsSbBi active region. Nevertheless, the detectors exhibit a quantum efficiency of 17% at 3.3 μm wavelength with a dark current density of 50 μA/cm2 at 150 K and −0.4 V bias and the strong photoresponse turn-on characteristic of a random alloy at 4.32 μm wavelength and 150 K. A shot noise-equivalent irradiance analysis indicates that this detectors' dark-current-limited noise-equivalent irradiance of 1012 cm−2 s−1 is two orders of magnitude greater than the Rule 07 expectation for this cutoff, and dark-current-limited shot noise-equivalent irradiance performance transitions to photon-limited at 1.7 × 1015 photons/cm2 s.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)
• Sponsoring Organization: USDOE
• Grant/Contract Number: 89233218CNA000001
• OSTI ID: 2422543
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 123; ISSN 0003-6951
• Publisher: American Institute of Physics (AIP)Copyright Statement
• Country of Publication: United States
• Language: English