Optical constants of polycrystalline Al0.25Ga0.75P and Al0.9Ga0.1As determined by variable-angle spectroscopic ellipsometry

Quispe, D.; Eng, B.; Kim, M.; Onno, A. L.; Coppa, B. J.; Yu, Z. J.; Lee, M. L.; Holman, Zachary C.

doi:10.1063/5.0155214

Title: Optical constants of polycrystalline Al_0.25Ga_0.75P and Al_0.9Ga_0.1As determined by variable-angle spectroscopic ellipsometry

Journal Article · 17 August 2023 · Journal of Applied Physics

DOI: https://doi.org/10.1063/5.0155214 · OSTI ID:2418635

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Arizona State University, Tempe, AZ (United States); OSTI
University of Illinois at Urbana-Champaign, IL (United States)
Arizona State University, Tempe, AZ (United States)

The optical constants of single-crystal Al_xGa_1-xP and Al_xGa_1-xAs have been widely studied at various Al compositions but have not yet been thoroughly investigated as polycrystalline materials. Using variable-angle spectroscopic ellipsometry, we estimate and analyze the optical constants of polycrystalline Al_0.25Ga_0.75P and Al_0.9Ga_0.1As that were non-epitaxially deposited at deposition temperatures of either 250 or 420 °C, and with various dopant species, dopant concentrations, and V/III flux ratios. Here, for wavelengths of 350–400 nm, decreasing the V/III ratio increases the refractive index of Be-doped polycrystalline Al_0.25Ga_0.75P. For wavelengths >500 nm, as the targeted Be dopant concentration increases for polycrystalline Al_0.25Ga_0.75P, the amount the extinction coefficient increases and the indirect bandgap decreases depends on the V/III ratio. Furthermore, Si-doped polycrystalline Al_0.25Ga_0.75P has significantly smaller extinction coefficient values than when it is Be-doped, for the same V/III ratio and targeted doping concentration, at wavelengths >500 nm. Based on our findings, we hypothesize that the dopant species, dopant concentration, and the V/III ratio dictate various types of defect concentrations, which then affect the optical constants and indirect bandgap of polycrystalline Al_0.25Ga_0.75P. Additionally, for wavelengths >500 nm, we find that polycrystalline Al_0.25Ga_0.75P and Al_0.9Ga_0.1As have the lowest extinction coefficient values when deposited at 420 °C, as opposed to 250 °C. Thus, we hypothesize that the deposition temperature is the most significant factor in dictating the optical constants of these polycrystalline III-Vs. Ultimately, this work demonstrates alternative methods to tune the optical constants of polycrystalline Al_0.25Ga_0.75P and Al_0.9Ga_0.1As, as opposed to tuning the Al composition.

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Research Organization:: University of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0008547

OSTI ID:: 2418635

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 134; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Optical constants of polycrystalline Al0.25Ga0.75P and Al0.9Ga0.1As determined by variable-angle spectroscopic ellipsometry

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Title: Optical constants of polycrystalline Al_0.25Ga_0.75P and Al_0.9Ga_0.1As determined by variable-angle spectroscopic ellipsometry